AS6C8016A-55ZIN

7
EM681FV16B Family
Low Power, 512Kx16 SRAM
t
WR
(4)
t
WC
Address
CS
UB,LB
WE
Data in
Data out
t
CW
(2)
t
AW
t
BW
t
WP
(1)
t
AS
(3)
High-Z
t
DW
t
DH
High-Z
t
OW
t
WHZ
Data Undefined
TIMING WAVEFORM OF WRITE CYCLE(1) (WE Controlled)
Data Valid
t
WC
Address
CS
UB,LB
WE
Data in
Data out
t
CW
(2)
t
WR
(4)
t
BW
t
WP
(1)
t
DW
t
DH
TIMING WAVEFORM OF WRITE CYCLE(2) (CS Controlled)
t
AS
(3)
High-Z High-Z
Data Valid
t
AW
AUGUST 2010
512K X 16 BIT LOW POWER CMOS SRAM
AS6C8016A
8
EM681FV16B Family
Low Power, 512Kx16 SRAM
NOTES (WRITE CYCLE)
1. A write occurs during the overlap(t
WP
) of low CS and low WE. A write begins when CS goes low and WE goes low with asserting
UB
or LB for single byte operation or simultaneously asserting UB and LB for double byte operation. A write ends at the earliest
transition when CS
goes high and WE goes high. The t
WP
is measured from the beginning of write to the end of write.
2. t
CW
is measured from the CS going low to end of write.
3. t
AS
is measured from the address valid to the beginning of write.
4. t
WR
is measured from the end or write to the address change. t
WR
applied in case a write ends as CS or WE going high.
AUGUST 2010
512K X 16 BIT LOW POWER CMOS SRAM
AS6C8016A
t
WC
Address
CS
UB,LB
WE
Data in
Data out
t
CW
(2)
t
WR
(4)
t
BW
t
WP
(1)
t
DW
t
DH
TIMING WAVEFORM OF WRITE CYCLE(3) (UB, LB Controlled)
High-Z High-Z
Data Valid
t
AS
(3)
t
AW
9
EM681FV16B Family
Low Power, 512Kx16 SRAM
DATA RETENTION CHARACTERISTICS
Parameter Symbol Test Condition Min Typ Max Unit
V
CC
for Data Retention V
DR
I
SB1
Test Condition
(Chip Disabled)
1)
1.5 - 3.6 V
Data Retention Current
I
DR
V
CC
=1.5V, I
SB1
Test Condition
(Chip Disabled)
1)
- - 4 μA
Chip Deselect to Data Retention Time t
SDR
See data retention wave form
0 - -
ns
Operation Recovery Time t
RDR
t
RC
- -
NOTES
1. See the I
SB1
measurement condition of datasheet page 4.
DATA RETENTION WAVE FORM
t
SDR
t
RDR
Data Retention Mode
CS
> Vcc-0.2V
V
cc
2.7V
2.2V
V
DR
CS, LB / UB
GND
AUGUST 2010
512K X 16 BIT LOW POWER CMOS SRAM
AS6C8016A
Max

AS6C8016A-55ZIN

Mfr. #:
Manufacturer:
Alliance Memory
Description:
SRAM 8M, 2.8-3.6V, 55ns 512K x 16 Asyn SRAM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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