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GT60N321(Q)

P1-P3P4-P6
GT60N321
2013-11-01
1
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60N321
High-Power Switching Applications
Fourth Generation IGBT
• FRD included between emitter and collector
• Enhancement mode type
• High speed IGBT : t
f
= 0.25 μs (typ.) (I
C
= 60 A)
FRD : t
rr
= 0.8 μs (typ.) (di/dt = −20 A/μs)
• Low saturation voltage: V
CE (sat)
= 2.3 V (typ.) (I
C
= 60 A)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics symbol Rating Unit
Collector-Emitter Voltage V
CES
1000 V
Gate-Emitter Voltage V
GES
±25 V
DC I
C
60
Collector Current
1 ms I
CP
120
A
DC I
ECF
15
Emitter-Collector
Forward Current
1 ms I
ECFP
120
A
Collector Power Dissipation
(Tc = 25°C)
P
C
170 W
Junction Temperature T
j
150 °C
Storage Temperature T
stg
−55 to 150 °C
Screw Torque ⎯
0.8 N･m
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Equivalent Circuit Marking
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-21F2C
Weight: 9.75 g (typ.)
Emitter
Collector
Gate
GT60N321
TOSHIBA
JAPAN
Lot No.
Note 1
Part No. (or abbreviation code)
Start of commercial production
2000-03
Note 1 line under a Lot No. identifies the indication of product Labels.
Not underlined: `Pb`/INCLUDES > MCV
Underlined: `G`/RoHS COMPATIBLE or `G`/RoHS `Pb`
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product. The
RoHS is the Directive 2011/65/EU of the European Parliament and of the
Council of 8 June 2011 on the restriction of the use of certain hazardous
substances in electrical and electronic equipment.
GT60N321
2013-11-01
2
Electrical Characteristics
(Ta
=
25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Gate Leakage Current I
GES
V
GE
= ±25 V, V
CE
= 0 ⎯ ⎯ ±500 nA
Collector Cut-off Current I
CES
V
CE
= 1000 V, V
GE
= 0 ⎯ ⎯ 1.0 mA
Gate-Emitter Cut-off Voltage V
GE (OFF)
I
C
= 60 mA, V
CE
= 5 V 3.0 ⎯ 6.0 V
Collector-Emitter Saturation Voltage V
CE (sat)
(1) I
C
= 10 A, V
GE
= 15 V ⎯ 1.6 2.3 V
Collector-Emitter Saturation Voltage V
CE (sat)
(2) I
C
= 60 A, V
GE
= 15 V ⎯ 2.3 2.8 V
Input Capacitance C
ies
V
CE
= 10 V, V
GE
= 0, f = 1 MHz ⎯ 4000 ⎯ pF
Rise Time t
r
⎯ 0.23 ⎯
Turn-on Time t
on
⎯ 0.33 ⎯
Fall Time t
f
⎯ 0.25 0.40
Switching Time
Turn-off Time t
off
⎯ 0.70
⎯
μs
Emitter-Collector Forward Voltage V
ECF
I
EC
= 15 A, V
GE
= 0 ⎯ 1.2 1.9 V
Reverse Recovery Time t
rr
I
F
= 15 A, V
GE
= 0, di/dt = −20 A/μs ⎯ 0.8 2.5 μs
Thermal Resistance（IGBT） R
th(j-c)
⎯ ⎯ ⎯ 0.74 °C/W
Thermal Resistance（Diode） R
th(j-c)
⎯ ⎯ ⎯ 4.0 °C/W
−15 V
15 V
0
51 Ω
600 V
10 Ω
GT60N321
2013-11-01
3
0 2 4 6 8
0
20
40
60
80
100
25
T
C
= 125°C
Common
Emitter
V
CE
= 5 V
40
0510 15 20 25
0
2
4
6
8
10
80
6030
I
C
= 10 A
Common
emitter
Tc = −40°C
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
Collector-emitter voltage V
CE
(V)
I
C
– V
CE
Collector current I
C
(A)
Gate-emitter voltage V
GE
(V)
V
CE
– V
GE
Collector-emitter voltage V
CE
(V)
Gate-emitter voltage V
GE
(V)
V
CE
– V
GE
Collector-emitter voltage V
CE
(V)
Gate-emitter voltage V
GE
(V)
V
CE
– V
GE
Gate-emitter voltage V
GE
(V)
I
C
– V
GE
Case temperature Tc (°C)
V
CE (sat)
– Tc
Collector-emitter saturation voltage
V
CE (sat)
(V)
0 5 10 15 20 25
0
2
4
6
8
10
80
60
30 I
C
= 10 A
Common
emitter
Tc = 25°C
0510 15 20 25
0
2
4
6
8
10
80
60
30
I
C
= 10 A
Common
emitter
Tc = 125°C
−40 0 40 80 120
0
1
2
3
4
80
I
C
= 10 A
Common
emitter
V
GE
= 15 V
160
60
30
100
80
60
40
20
0
0 1 2 3 4 5
V
GE
= 7 V
15 V
20 V
25 V
10 V
Common
emitter
Tc = 25°C
P1-P3P4-P6

GT60N321(Q)

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