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VS-80EBU02

P1-P3P4-P6P7-P7
Case Styles
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80EBU02
Bulletin PD-20740 rev. B 02/06
t
rr
= 35ns
I
F(AV)
= 80Amp
V
R
= 200V
Description/ Applications
Absolute Maximum Ratings
Ultrafast Soft Recovery Diode
V
R
Cathode to Anode Voltage 200 V
I
F(AV)
Continuous Forward Current, T
C
= 112°C 80 A
I
FSM
Single Pulse Forward Current, T
C
= 25°C 800
I
FRM
Maximum Repetitive Forward Current 160
T
J
,
T
STG
Operating Junction and Storage Temperatures - 55 to 175 °C
Parameters Max Units
These diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems.
The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited
for HF welding, power converters and other applications where switching losses are not significant portion of the total
losses.
Square Wave, 20kHz
Features
• Ultrafast Recovery
• 175°C Operating Junction Temperature
• Screw Mounting Only
• Lead-Free Plating
Benefits
• Reduced RFI and EMI
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
Document Number: 93024
www.vishay.com
1
80EBU02
Bulletin PD-20740 rev. B 02/06
V
BR
,
V
r
Breakdown Voltage, 200 - - V I
R
= 50µA
Blocking Voltage
V
F
Forward Voltage - 0.98 1.13 V I
F
= 80A
- 0.79 0.92 V I
F
= 80A, T
J
= 175°C
I
R
Reverse Leakage Current - - 50 µA V
R
= V
R
Rated
--2mAT
J
= 150°C, V
R
= V
R
Rated
C
T
Junction Capacitance - 89 - pF V
R
= 200V
L
S
Series Inductance - 3.5 - nH Measured lead to lead 5mm from package body
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters Min Typ Max Units Test Conditions
t
rr
Reverse Recovery Time --35 ns I
F
= 1.0A, di
F
/dt = 200A/µs, V
R
= 30V
-32- T
J
= 25°C
-52- T
J
= 125°C
I
RRM
Peak Recovery Current - 4.4 - A T
J
= 25°C
- 8.8 - T
J
= 125°C
Q
rr
Reverse Recovery Charge - 70 - nC T
J
= 25°C
- 240 - T
J
= 125°C
Dynamic Recovery Characteristics @ T
J
= 25°C (unless otherwise specified)
I
F
= 80A
V
R
= 160V
di
F
/dt = 200A/µs
Parameters Min Typ Max Units
R
thJC
Thermal Resistance, Junction to Case 0.70 K/W
R
thCS
Thermal Resistance, Case to Heatsink 0.2
Wt Weight 5.02 g
0.18 (oz)
T Mounting Torque 1.2 2.4 N * m
10 20 lbf.in
Thermal - Mechanical Characteristics
Mounting Surface, Flat, Smooth and Greased
Parameters Min Typ Max Units Test Conditions
Document Number: 93024
www.vishay.com
2
Bulletin PD-20740 rev. B 02/06
80EBU02
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Forward Voltage Drop - V
FM
(V)
Instantaneous Forward Current - I
F
(A)
Reverse Voltage - V
R
(V)
Reverse Voltage - V
R
(V)
Junction Capacitance - C
T
(pF)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
t1, Rectangular Pulse Duration (Seconds)
Thermal Impedance Z
thJC
(°C/W)
Reverse Current - I
R
(µA)
0.001
0.01
0.1
1
10
100
1000
0 50 100 150 200
25˚C
T = 175˚C
J
125˚C
10
100
1000
10000
1 10 100 1000
T = 25˚C
J
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Single Pulse
(Thermal Resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
2
t
1
t
P
DM
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
1
10
100
1000
0 0.5 1 1.5 2 2.5
T = 175˚C
T = 125˚C
T = 25˚C
J
J
J
Document Number: 93024
www.vishay.com
3
P1-P3P4-P6P7-P7

VS-80EBU02

Mfr. #:
Buy VS-80EBU02
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 200 Volt 80 Amp
Lifecycle:
New from this manufacturer.
Delivery:
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