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IXFP5N100PM

P1-P3P4-P4
© 2013 IXYS CORPORATION, All Rights Reserved. DS100537(5/13)
Polar
TM
HiPerFET
TM
Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
IXFP5N100PM
Features
z
Plastic overmolded Tab for Electrical
Isolation
z
Low R
DS(on)
and Q
G
z
Avalanche Rated
z
Low Package Inductance
z
Fast Intrinsic Rectifier
Advantages
z
High Power Density
z
Easy to Mount
z
Space Savings
Applications
z
Switch-Mode and Resonant-Mode
Power Supplies
z
DC-DC Converters
z
Laser Drivers
z
AC and DC Motor Drives
z
Robotics and Servo Controls
V
DSS
= 1000V
I
D25
= 2.3A
R
DS(on)
≤≤
≤≤
≤ 2.8
ΩΩ
ΩΩ
Ω
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 250μA 1000 V
V
GS(th)
V
DS
= V
GS
, I
D
= 250μA 3.0 6.0 V
I
GSS
V
GS
= ± 30V, V
DS
= 0V ±100 nA
I
DSS
V
DS
= V
DSS
, V
GS
= 0V 10 μA
T
J
= 125°C 750 μA
R
DS(on)
V
GS
= 10V, I
D
= 2.5A, Note 1 2.8 Ω
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 1000 V
V
DGR
T
J
= 25°C to 150°C, R
GS
= 1MΩ 1000 V
V
GSS
Continuous ±30 V
V
GSM
Transient ±40 V
I
D25
T
C
= 25°C 2.3 A
I
DM
T
C
= 25°C, Pulse Width Limited by T
JM
10 A
I
A
T
C
= 25°C5 A
E
AS
T
C
= 25°C 300 mJ
dv/dt I
S
≤ I
DM
, V
DD
≤ V
DSS
, T
J
≤ 150°C 10 V/ns
P
D
T
C
= 25°C42 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
Maximum Lead Temperature for Soldering 300 °C
T
SOLD
Plastic Body for 10s 260 °C
M
d
Mounting Torque 1.13 / 10 Nm/lb.in.
Weight 2.5 g
Advance Technical Information
G = Gate D = Drain
S = Source
OVERMOLDED
(IXFP...M) OUTLINE
G
D
S
Isolated Tab
IXFP5N100PM
IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Terminals: 1 - Gate
2 - Drain
3 - Source
123
OVERMOLDED TO-220 FULL PAK
Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= 20V, I
D
= 2.5A, Note 1 2.4 4.0 S
C
iss
1830 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 113 pF
C
rss
20 pF
R
Gi
Gate Input Resistance 1.6 Ω
t
d(on)
12 ns
t
r
13 ns
t
d(off)
30 ns
t
f
37 ns
Q
g(on)
33.4 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 2.5A 10.6 nC
Q
gd
14.4 nC
R
thJC
3.0 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
I
S
V
GS
= 0V 5 A
I
SM
Repetitive, Pulse Width Limited by T
JM
20 A
V
SD
I
F
= I
S
, V
GS
= 0V, Note 1 1.3 V
t
rr
200 ns
I
RM
7.4
A
Q
RM
0.43 μC
I
F
= 5A, -di/dt = 100A/μs
V
R
= 100V, V
GS
= 0V
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 2.5A
R
G
= 5Ω (External)
© 2013 IXYS CORPORATION, All Rights Reserved.
IXFP5N100PM
Fig. 1. Output Characteristics @ T
J
= 25ºC
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
02468101214
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7
V
5
V
6
V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
1
2
3
4
5
6
7
8
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
7
V
6
V
Fig. 3. Output Characteristics @ T
J
= 125ºC
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
036912151821242730
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
5
V
7V
6V
Fig. 4. R
DS(on)
Normalized to I
D
= 2.5A Value vs.
Junction Temperature
0.4
0.8
1.2
1.6
2.0
2.4
2.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 5A
I
D
= 2.5A
Fig. 5. R
DS(on)
Normalized to I
D
= 2.5A Value vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
012345678
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maximum Drain Current vs.
Case Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
P1-P3P4-P4

IXFP5N100PM

Mfr. #:
Buy IXFP5N100PM
Manufacturer:
Littelfuse
Description:
MOSFET DISCMOSFETN-CH HIPERFET-POLA
Lifecycle:
New from this manufacturer.
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