PSMN012-80PS_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 25 June 2009 6 of 13
NXP Semiconductors
PSMN012-80PS
N-channel 80 V 11 mΩ standard level MOSFET
[1] Tested to JEDEC standards where applicable.
[2] Measured 3 mm from package.
Source-drain diode
V
SD
source-drain voltage I
S
=25A; V
GS
=0V; T
j
=25°C;
see Figure 17
- 0.86 1.2 V
t
rr
reverse recovery time I
S
=50A; dI
S
/dt = 100 A/µs; V
GS
=0V;
V
DS
=40V
-45-ns
Q
r
recovered charge - 64 - nC
Table 6. Characteristics
…continued
Symbol Parameter Conditions Min Typ Max Unit
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Drain-source on-state resistance as a function
of drain current; typical values
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 8. Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
003aad029
0
50
100
150
200
250
0246810
V
DS
(V)
I
D
(A)
6.5
6
7
5.5
5
4.5
10
V
GS
(V) = 15
003aad030
5
10
15
20
25
0 50 100 150 200 250
I
D
(A)
R
DSon
(mΩ)
7
6
10
V
GS
(V) = 15
5.5
5
003aad031
0
20
40
60
80
100
0123456
V
GS
(V)
I
D
(A)
T
j
= 175
°
C
25
°
C
003aad035
2000
3000
4000
246810
V
GS
(V)
C
(pF)
C
iss
C
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