QSH29TR

QSH29

Transistors

1/3

Dual digital transistors

QSH29

zFeatures

In addition to the standard features of digital transistor,

this transisitor has:

1) Low collector saturation voltage, typically

V

CE (sat) =100mV for IC / IB=100mA / 1mA(Typ.)

2) High current gain, minimum

h

FE=500mA for VCE=5V, IC=200mA.

3) Built in Zener diode for protection against surges when

connected to inductive load.

zStructure

NPN silicon epitaxial planar transistor

zApplications

Driver

zPackaging specifications and h

FE

Packaging type

Code

Taping

Package

Basic ordering unit (pieces)

TSMT6

QSH29

TR

3000

Type

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol

V

CBO

V

CEO

1.25

P

D

Tstg

Limits

60±10

60±10

−55 to +150

Unit

V

V

W/TOTAL

∗1

∗2

∗2

∗1 Pw=10ms 1 Pulse

∗2 Each terminal mounted on a ceramic board

°C

°C

Collector-base voltage

Collector-emitter voltage

Power dissipation

Range of storage temperature

Emitter-base voltage

Collector current

V

EBO

I

C

5

500

V

mA

I

CP

1A

0.9

W/1 ELEMENT

Tj 150

Junction temperature

<<

DTr1

>> <<

DTr2

>>

Continuous

Pulsed

zDimensions (Unit : mm)

Abbreviated symbol : H29

TSMT6

zE

q

uivalent circuit

(1) : Emitter (DTr1)

(2) : Base (DTr1)

(3) : Collector (DTr2)

(4) : Emitter (DTr2)

(5) : Base (DTr2)

(6) : Collector (DTr1)

Di

Di

DTr2

R=10kΩ

DTr1

R

R

(6) (5)

(4)

(1) (2) (3)

QSH29

Transistor

2/3

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

BV

CEO

50

−

70 V

I

C

=50µA

I

C

=50µA

I

E

=720µA

V

CB

=40V

I

C

=100mA, I

B

=1mA

V

EB

=4V

BV

CBO

50

−

70 V

BV

EBO

5.0

−

− V

I

CBO

−−

0.5 µA

V

CE (sat)

−

100

300 mV

I

EBO

300 −

580 µA

R

7

10

13 kΩ

Collector-emitter breakdown voltage

Collector-base breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Collector-emitter saturation voltage

Emitter-base resistance

V

CE

=5V, I

C

=200mAh

FE

500

−

−−

−

DC current gain

<<

DTr1

>> <<

DTr2

>>

QSH29

Transistor

3/3

z

Electrical characterristic curves

Fig.1 Grounded Emitter Propagation

Characteristics

0.1 1 10

COLLECTOR CURRENT : I

C

(A)

1

0.001

0.01

0.1

V

CE

=2V

BASE TO EMITTER VOLTAGE : V

BE

(V)

125˚C

25˚C

−40˚C

Fig.2 Typical Output Characteristics

012345678910

200

300

400

500

100

0

I

B

=100uA

I

B

=200uA

I

B

=300uA

I

B

=500uA

I

B

=600uA

I

B

=400uA

Ta=25˚C

COLLECTOR CURRENT : I

C

(mA)

COLLECTOR TO EMITTER VOLTAGE : V

CE

(V)

1

1000

100

10

10000

0.001 0.01 0.1 1

COLLECTOR CURRENT : I

C

(A)

DC CURRENT GAIN : h

FE

Fig.3 DC Current Gain vs.

Collector Current

−

40

°

C

25

°

C

125

°

C

V

CE

=5V

Fig.4 Collector-Emitter Saturation

Voltage vs. Collector Current ( )

0.01 0.1 1

0.01

0.1

1

10

Ta=25˚C

COLLECTOR CURRENT : I

C

(A)

COLLECTOR SATURATION VOLTAGE

: V

CE(sat)

(V)

Ic/Ib=200/1

Ic/Ib=150/1

Ic/Ib=100/1

Fig.5 Collector-Emitter Saturation

Voltage vs. Collector Current ( )

0.01 0.1 1

0.01

0.1

1

10

Ic/Ib=100/1

COLLECTOR CURRENT : I

C

(A)

COLLECTOR SATURATION VOLTAGE

: V

CE(sat)

(V)

125

°

C

25

°

C

−

40

°

C

Fig.6 Base-emitter Saturation

Voltage vs. Collector Current

0.001 0.01 0.1 1

0.1

10

1

Ic/Ib=10/1

COLLECTOR CURRENT : I

C

(A)

BASE EMITTER SATURATION VOLTAGE

: V

BE

(sat) (V)

−40˚C

25˚C

125˚C

Fig.7 Safe Operating Area

0.1 1 10010

COLLECTOR CURRENT : I

C

(A)

10

0.001

0.01

0.1

1

Ta=25˚C

Pulsed

COLLECTOR TO EMITTER VOLTAGE : V

CE

(V)

DC (Ta=25˚C)

100ms

1ms

10ms

QSH29TR

Mfr. #:

Manufacturer:

Description:

Bipolar Transistors - Pre-Biased DUAL DIGI TRNSISTR

Lifecycle:

New from this manufacturer.

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QSH29TR