CY7C1461AV33
CY7C1463AV33
Document Number: 38-05356 Rev. *O Page 12 of 24
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ............................... –65 C to +150 C
Ambient Temperature with
Power Applied ......................................... –55 C to +125 C
Supply Voltage on V
DD
Relative to GND .....–0.5 V to +4.6 V
Supply Voltage on V
DDQ
Relative to GND .... –0.5 V to +V
DD
DC Voltage Applied to Outputs
in Tri-State ........................................–0.5 V to V
DDQ
+ 0.5 V
DC Input Voltage ................................–0.5 V to V
DD
+ 0.5 V
Current into Outputs (LOW) ........................................20 mA
Static Discharge Voltage
(MIL-STD-883, Method 3015) ................................ > 2001 V
Latch Up Current .................................................. > 200 mA
Operating Range
Range
Ambient
Temperature
V
DD
V
DDQ
Commercial 0 °C to +70 °C
3.3 V– 5% /
+ 10%
2.5 V – 5% to
V
DD
Industrial –40 °C to +85 °C
Electrical Characteristics
Over the Operating Range
Parameter
[10, 11]
Description Test Conditions Min Max Unit
V
DD
Power supply voltage 3.135 3.6 V
V
DDQ
I/O supply voltage for 3.3 V I/O 3.135 V
DD
V
for 2.5 V I/O 2.375 2.625 V
V
OH
Output HIGH voltage for 3.3 V I/O, I
OH
= –4.0 mA 2.4 – V
for 2.5 V I/O, I
OH
= –1.0 mA 2.0 – V
V
OL
Output LOW voltage for 3.3 V I/O, I
OL
= 8.0 mA – 0.4 V
for 2.5 V I/O, I
OL
= 1.0 mA – 0.4 V
V
IH
Input HIGH voltage
[10]
for 3.3 V I/O 2.0 V
DD
+ 0.3 V V
for 2.5 V I/O 1.7 V
DD
+ 0.3 V V
V
IL
Input LOW voltage
[10]
for 3.3 V I/O –0.3 0.8 V
for 2.5 V I/O –0.3 0.7 V
I
X
Input leakage current except ZZ
and MODE
GND V
I
V
DDQ
–5 5 A
Input current of MODE Input = V
SS
–30 – A
Input = V
DD
–5A
Input current of ZZ Input = V
SS
–5 – A
Input = V
DD
–30A
I
OZ
Output leakage current GND V
I
V
DDQ,
Output Disabled –5 5 A
I
DD
V
DD
operating supply current V
DD
= Max, I
OUT
= 0 mA,
f = f
MAX
= 1/t
CYC
7.5 ns cycle,
133 MHz
–310mA
I
SB1
Automatic CE power down
current – TTL Inputs
V
DD
= Max, Device Deselected,
V
IN
V
IH
or V
IN
V
IL
; f = f
MAX
,
Inputs Switching
7.5 ns cycle,
133 MHz
–180mA
I
SB2
Automatic CE power down
current – CMOS Inputs
V
DD
= Max, Device Deselected,
V
IN
0.3 V or V
IN
> V
DD
– 0.3 V,
f = 0, Inputs Static
7.5 ns cycle,
133 MHz
–120mA
I
SB3
Automatic CE power down
current – CMOS Inputs
V
DD
= Max, Device Deselected,
V
IN
0.3 V or V
IN
> V
DDQ
– 0.3 V
f = f
MAX
, Inputs Switching
7.5 ns cycle,
133 MHz
–180mA
I
SB4
Automatic CE Power down
current – TTL Inputs
V
DD
= Max, Device Deselected,
V
IN
V
DD
– 0.3 V or V
IN
0.3 V,
f = 0, Inputs Static
7.5 ns cycle,
133 MHz
–135mA
Notes
10. Overshoot: V
IH(AC)
< V
DD
+ 1.5 V (Pulse width less than t
CYC
/2), undershoot: V
IL(AC)
> –2 V (Pulse width less than t
CYC
/2).
11. T
Power-up
: Assumes a linear ramp from 0 V to V
DD(min)
within 200 ms. During this time V
IH
< V
DD
and V
DDQ
< V
DD
.