©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
MPSA13 Rev. A
MPSA13 NPN Darlington Transistor
July 2007
MPSA13
NPN Darlington Transistor
• This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A.
• Sourced from process 05.
Absolute Maximum Ratings T
a
= 25°C unless otherwise noted
Electrical Characteristics T
a
=25°C unless otherwise noted
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Symbol Parameter Value Units
V
CES
Collector-Emitter Voltage 30 V
V
CBO
Collector-Base Voltage 30 V
V
EBO
Emitter-Base Voltage 10 V
I
C
Collector Current - Continuous 1.2 A
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)CES
Collector-Emitter Breakdown Voltage I
C
= 100μA, I
B
= 0 30 V
I
CBO
Collector-Cutoff Current V
CB
= 30V, I
E
= 0 100 nA
I
EBO
Emitter-Cutoff Current V
EB
= 10V, I
C
= 0 100 nA
On Characteristics *
h
FE
DC Current Gain V
CE
= 5.0V, I
C
=10mA
V
CE
= 5.0, I
C
= 100mA
5,000
10,000
V
CE (sat)
Collector-Emitter Saturation Voltage I
C
= 100mA, I
B
= 0.1mA 1.5 V
V
BE (on)
Base-Emitter On Voltage I
C
= 100mA,V
CE
= 5.0V 2.0 V
Small Signal Characteristics
f
T
Current Gain Bandwidth Product I
C
= 10mA, V
CE
= 10V, f = 100MHz 125 pF
TO-92
1. Emitter 2. Base 3. Collector
1
