OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

1N5818RLG

P1-P3P4-P6P7-P7
1N5817, 1N5818, 1N5819
http://onsemi.com
4
7/8
20
40
50
90
80
70
60
30
10
3/45/81/23/81/4 1.01/81
R
θ
JL
, THERMAL RESISTANCE, JUNCTION−TO−LEAD (
°
C/W)
BOTH LEADS TO HEATSINK,
EQUAL LENGTH
MAXIMUM
TYPICAL
L, LEAD LENGTH (INCHES)
Figure 4. Steady−State Thermal Resistance
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
4.02.01.00.80.60.40.2
P
F(AV)
, AVERAGE POWER DISSIPATION (WATTS)
I
F(AV)
, AVERAGE FORWARD CURRENT (AMP)
dc
SQUARE WAVE
T
J
≈ 125°C
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
10k2.0k1.0k5002001005020105.02.01.00.50.20.1 5.0k
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
Z
q
JL(t)
= Z
q
JL
• r(t)
P
pk
P
pk
t
p
t
1
TIME
DUTY CYCLE, D = t
p
/t
1
PEAK POWER, P
pk
, is peak of
an
equivalent square power pulse.
DT
JL
= P
pk
• R
q
JL
[D + (1 − D) • r(t
1
+ t
p
) + r(t
p
) − r(t
1
)] where
DT
JL
= the increase in junction temperature above the lead temperature
r(t) = normalized value of transient thermal resistance at time, t, from Figure 6,
i.e.:
r(t) = r(t
1
+ t
p
) = normalized value of transient thermal resistance at time, t
1
+ t
p
.
t, TIME (ms)
NOTE 4. — MOUNTING DATA
Data shown for thermal resistance, junction−to−ambient
(R
qJA
) for the mountings shown is to be used as typical guide-
line values for preliminary engineering, or in case the tie
point temperature cannot be measured.
TYPICAL VALUES FOR R
q
JA
IN STILL AIR
Mounting
Method
1/8 1/4 1/2 3/4
Lead Length, L (in)
R
q
JA
1
2
3
52
67
65
80
72
87
85
100
°C/W
°C/W
°C/W50
Mounting Method 1
P.C. Board with
1−1/2″ x 1−1/2″
copper surface.
Mounting Method 3
P.C. Board with
1−1/2″ x 1−1/2″
copper surface.
LL
L = 3/8″
BOARD GROUND
PLANE
VECTOR PIN MOUNTING
LL
Mounting Method 2
5
10
20
Sine Wave
I
(FM)
I
(AV)
=
π
(Resistive
Load)
Capacitive
Loads
{
Figure 5. Forward Power Dissipation
1N5817−19
Figure 6. Thermal Response
1N5817, 1N5818, 1N5819
http://onsemi.com
5
100705.0
30
20
10
7.0
5.0
3.0
207.0 103.02.0 301.0 40
15
5.0
3.0
2.0
0.3
0.2
0.1
403612
30
20
1.0
0.5
0.05
0.03
2416 208.04.0 28032
10
20
7.0
5.0
2.0
0.2
0.3
0.5
0.7
1.0
3.0
0.9 1.0 1.1
0.1
0.07
0.05
0.03
0.02
0.60.50.40.30.2 0.70.1 0.8
NOTE 5. — THERMAL CIRCUIT MODEL
(For heat conduction through the leads)
T
A(A)
T
A(K)
R
q
S(A)
R
q
L(A)
R
q
J(A)
R
q
J(K)
R
q
L(K)
R
q
S(K)
P
D
T
L(A)
T
C(A)
T
J
T
C(K)
T
L(K)
v
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
i
F
, INSTANTANEOUS FORWARD CURRENT (AMP)
Figure 7. Typical Forward Voltage
I
FSM
, PEAK SURGE CURRENT (AMP)
NUMBER OF CYCLES
Figure 8. Maximum Non−Repetitive Surge Current
I
R
, REVERSE CURRENT (mA)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 9. Typical Reverse Current
T
C
= 100°C
25°C
1 Cycle
T
L
= 70°C
f = 60 Hz
Surge Applied at
Rated Load Conditions
1N5817
1N5818
1N5819
T
J
= 125°C
100°C
25°C
Use of the above model permits junction to lead thermal re-
sistance for any mounting configuration to be found. For a
given total lead length, lowest values occur when one side of
the rectifier is brought as close as possible to the heatsink.
Terms in the model signify:
T
A
= Ambient Temperature T
C
= Case Temperature
T
L
= Lead Temperature T
J
= Junction Temperature
R
q
S
= Thermal Resistance, Heatsink to Ambient
R
q
L
= Thermal Resistance, Lead to Heatsink
R
q
J
= Thermal Resistance, Junction to Case
P
D
= Power Dissipation
(Subscripts A and K refer to anode and cathode sides, re-
spectively.) Values for thermal resistance components are:
R
q
L
= 100°C/W/in typically and 120°C/W/in maximum
R
q
J
= 36°C/W typically and 46°C/W maximum.
75°C
1N5817, 1N5818, 1N5819
http://onsemi.com
6
NOTE 6. — HIGH FREQUENCY OPERATION
Since current flow in a Schottky rectifier is the result of
majority carrier conduction, it is not subject to junction
diode forward and reverse recovery transients due to
minority carrier injection and stored charge. Satisfactory
circuit analysis work may be performed by using a model
consisting of an ideal diode in parallel with a variable
capacitance. (See Figure 10.)
Rectification efficiency measurements show that
operation will be satisfactory up to several megahertz. For
example, relative waveform rectification efficiency is
approximately 70 percent at 2.0 MHz, e.g., the ratio of dc
power to RMS power in the load is 0.28 at this frequency,
whereas perfect rectification would yield 0.406 for sine
wave inputs. However, in contrast to ordinary junction
diodes, the loss in waveform efficiency is not indicative of
power loss: it is simply a result of reverse current flow
through the diode capacitance, which lowers the dc output
voltage.
10 200.8
70
200
100
50
30
20
10
6.04.02.01.00.6 8.00.4 40
C, CAPACITANCE (pF)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 10. Typical Capacitance
T
J
= 25°C
f = 1.0 MHz
1N5819
1N5818
1N5817
ORDERING INFORMATION
Device Package Shipping
†
1N5817 Axial Lead* 1000 Units / Bag
1N5817G Axial Lead* 1000 Units / Bag
1N5817RL Axial Lead* 5000 / Tape & Reel
1N5817RLG Axial Lead* 5000 / Tape & Reel
1N5818 Axial Lead* 1000 Units / Bag
1N5818G Axial Lead* 1000 Units / Bag
1N5818RL Axial Lead* 5000 / Tape & Reel
1N5818RLG Axial Lead* 5000 / Tape & Reel
1N5819 Axial Lead* 1000 Units / Bag
1N5819G Axial Lead* 1000 Units / Bag
1N5819RL Axial Lead* 5000 / Tape & Reel
1N5819RLG Axial Lead* 5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.
P1-P3P4-P6P7-P7

1N5818RLG

Mfr. #:
Buy 1N5818RLG
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 1A 30V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet