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DB5H411K0L

P1-P3P4-P5
Product Standards
Schottky Barrier Diode
DB5H411K0L
Absolute Maximum Ratings Ta = 25 C
Note: *1 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Page
IFM
forward surge current
*1
Double 2.25
3Non-repetitive peak Single
+85
V
1A
°C
A
A
0.75
Reverse voltage VR 40
Forward current (Average)
Single
IF(AV)
Double
3F
Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
Basic Part Number :
Dual DB2J411 (Parallel)
Code
1. Anode1
2. N.C.
―
Panasonic WSMini5-F1-B
JEITA SC-113CA
DB5H411K0L
Silicon epitaxial planar type
For high frequency rectification
DB2J411 in WSMini5 type package
Features
3. Anode2
Short reverse recovery time trr
Low forward voltage and low reverse leakage current
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Marking Symbol:
5. Cathode1
1of4
Unit: mm
4. Cathode2
Internal Connection
A
Junction temperature Tj 125 °C
UnitParameter Symbol Rating
Storage temperature Tstg
-40 toToprOperating ambient temperature
°C-55 to +125
2.1
2.0
0.7
1.7
0.130.2
1.3
(0.65)(0.65)
12
45
3
123
54
Doc No.
TT4-EA-13100
Revision .
2
Established
:
2011-03-23
Revised
:
2013-04-26
Product Standards
Schottky Barrier Diode
DB5H411K0L
Electrical Characteristics Ta = 25 C 3 C
　
　
Note
)
1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on
the charge of a human body and the leakage of current from the operating equipment.
3. *1 trr test circuit
Page
Forward voltage
IR VR = 40 V
VF IF = 1 A
Reverse current
6.8
V
μA
Typ
15
0.50
Parameter Symbol Conditions Min UnitMax
of 4
100
2
0.58
ns
IF = IR = 100 mA, Irr = 10 mA
pFTerminal capacitance Ct VR = 10 V, f = 1 MHz 21
Reverse recovery time
*1
trr
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 μs
t
r
= 0.35 ns
δ = 0.05
I
F
= 100 mA
I
R
= 100 mA
10%
I
rr
= 10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Input Pulse Output Pulse
Doc No.
TT4-EA-13100
Revision .
2
Established
:
2011-03-23
Revised
:
2013-04-26
Product Standards
Schottky Barrier Diode
DB5H411K0L
Technical Data ( reference )
Page 3 of 4
IF - VF
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
0.0 0.1 0.2 0.3 0.4 0.5 0.6
Forward voltage VF (V)
Forward current IF (A)
Ta = 125 °C
-40 °C
25 °C
85 °C
IR - VR
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
0 5 10 15 20 25 30 35 40
Reverse voltage VR (V)
Reverse current IR (A)
Ta = 125 °C
25 °C
-40 °C
85 °C
Ct - VR
0
20
40
60
80
100
120
140
0 5 10 15 20 25 30 35 40
Reverse voltage VR (V)
Terminal capacitance Ct (pF)
Ta = 25 °C
f = 1 MHz
Rth
- t
1
10
100
1000
0.001 0.01 0.1 1 10 100 1000
Time t (s)
Thermal resistance Rth (°C/W)
(1)
Rth(j-l) = 40 °C/W
(1) Non-heat sink
(2) Mounted on glass epoxy print board.
(3) Mounted on alumina print board.
Board size : 50 mm × 50 mm x 0.8 mm
Solder in : 2 mm x 2 mm
(2)
(3)
IF(AV) - Tl
0
0.25
0.5
0.75
1
1.25
0 25 50 75 100 125 150 175
Lead temperature Tl (°C)
Forward current (Average) IF(AV) (A)
DC
1/4
tp/T
1/2
Sine Wave
VR = 20 V
Tj = 125 °C
tp
T
IF
PF(AV) - IF(AV)
0
0.1
0.2
0.3
0.4
0.5
0.6
0 0.2 0.4 0.6 0.8 1 1.2
Forward current (Average) IF(AV) (A)
Forward power dissipation (Average) PF(AV) (W)
DC
1/4
1/2
Sine Wave
tp
T
IF
Doc No.
TT4-EA-13100
Revision .
2
Established
:
2011-03-23
Revised
:
2013-04-26
P1-P3P4-P5

DB5H411K0L

Mfr. #:
Buy DB5H411K0L
Manufacturer:
Panasonic
Description:
Schottky Diodes & Rectifiers 40V 1A WSMini5-F1-B 2.0x2.1mm Flat lead
Lifecycle:
New from this manufacturer.
Delivery:
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