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SI3458BDV-T1-E3

P1-P3P4-P6P7-P9P10-P11
www.vishay.com
4
Document Number: 69501
S09-0660-Rev. B, 20-Apr-09
Vishay Siliconix
Si3458BDV
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 150 °C
10
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
1
T
J
= 25 °C
100
1.25
1.50
1.75
2.00
2.25
2.50
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
(V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
V
GS
- Gate-to-Source Voltage (V)
0.05
0.10
0.15
0.20
0.25
02468 10
- On-Resistance (Ω)R
DS(on)
125 °C
25 °C
I
D
= 3.2 A
0
5
10
15
20
25
30
Power (W)
Time (s)
10 10000.10.010.001 1001
Safe Operating Area, Junction-to-Ambient
1
0.1 1 10 100
0.01
10
- Drain Current (A)I
D
0.1
T
A
= 25 °C
Single Pulse
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V
GS
at which R
DS(on)
is specified
BVDSS Limited
100
Limited by R
DS(on)
*
100 µs
1 ms
10 ms
100 ms
1 s, 10 s
DC
Document Number: 69501
S09-0660-Rev. B, 20-Apr-09
www.vishay.com
5
Vishay Siliconix
Si3458BDV
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
1
2
3
4
5
0 25 50 75 100 125 150
I
D
- Drain Current (A)
T
C
- Foot (Drain) Temperature (°C)
Power Derating
0
1
2
3
4
25 50 75 100 125 150
T
C
- Foot (Drain) Temperature (°C)
Power Dissipation (W)
www.vishay.com
6
Document Number: 69501
S09-0660-Rev. B, 20-Apr-09
Vishay Siliconix
Si3458BDV
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69501
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
000101110
-1
10
-4
100
0.2
0.1
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 75 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
Single Pulse
0.02
0.05
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
01110
-1
10
-4
0.2
0.1
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.02
Single Pulse
0.05
P1-P3P4-P6P7-P9P10-P11

SI3458BDV-T1-E3

Mfr. #:
Buy SI3458BDV-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 60V 4.1A 3.3W 100mohm @ 10V
Lifecycle:
New from this manufacturer.
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