This is information on a product in full production.
December 2015 DocID13392 Rev 2 1/13
13
STTH30R04
Ultrafast recovery diode
Datasheet - production data
Features
Ultrafast switching
Low reverse current
Low thermal resistance
Reduces switching and conduction losses
High junction temperature
ECOPACK
®
2 compliant component
Description
The compromise-free, high quality design of this
diode has produced a device with low leakage
current, regularly reproducible characteristics and
intrinsic ruggedness. These characteristics make
it ideal for heavy duty applications that demand
long term reliability.
.
$
.
$
.
$
$
.
$
.
$
72$&
'2
'ð3$.
$
Table 1. Device summary
Symbol Value
I
F(AV)
30 A
V
RRM
400 V
T
j (max)
175° C
V
F (typ)
0.97 V
t
rr (typ)
24 ns
www.st.com
Characteristics STTH30R04
2/13 DocID13392 Rev 2
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.9 x I
F(AV)
+ 0.01 x I
F
2
(RMS)
Table 2. Absolute ratings (limiting values at 25° C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 400 V
I
F(RMS)
RMS forward current 50 A
I
F(AV)
Average forward current, = 0.5 TO-220AC / DO-247 / D²PAK T
c
= 120 °C 30 A
I
FRM
Repetitive peak forward current t
p
= 10 ms, F = 1 KHz 500 A
I
FSM
Surge non repetitive forward
current
t
p
= 10 ms Sinusoidal 300 A
T
stg
Storage temperature range -65 to +175 ° C
T
j
Operating junction temperature range -40 to +175 ° C
Table 3. Thermal parameters
Symbol Parameter Value Unit
R
th(j-c)
Junction to case TO-220AC / DO-247 / D²PAK 1.15 °C/W
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Min Typ Max Unit
I
R
(1)
Reverse leakage current
T
j
= 25° C
V
R
= V
RRM
15
µAT
j
= 100° C 3 30
T
j
= 125° C 15 150
V
F
(2)
Forward voltage drop
T
j
= 25° C
I
F
= 15 A
1.26
V
T
j
= 150° C 0.8 1.0
T
j
= 25° C
I
F
= 30 A
1.45
T
j
= 100° C 1.3
T
j
= 150° C 0.97 1.2
1. Pulse test: t
p
= 5 ms, < 2%
2. Pulse test: t
p
= 380 µs, < 2%
DocID13392 Rev 2 3/13
STTH30R04 Characteristics
Table 5. Dynamic characteristics
Symbol Parameter
Test conditions
Min Typ Max Unit
t
rr
Reverse recovery time
I
F
= 1 A, dI
F
/dt = -200 A/µs,
V
R
= 30 V, T
j
= 25° C
24 35
ns
I
F
= 1 A, dI
F
/dt = -15 A/µs,
V
R
= 30 V, T
j
= 25° C
78 100
I
F
= 1 A, I
R
= 1 A,
I
RR
= 0.25 A, T
j
= 25° C
50
I
RM
Reverse recovery current
I
F
= 30 A, dI
F
/dt = -200 A/µs,
V
R
= 320 V, T
j
= 125° C
10 14 A
t
fr
Forward recovery time
I
F
= 30 A, dI
F
/dt = 100 A/µs,
V
FR
= 1.1 x V
Fmax
, T
j
= 25° C
500 ns
V
FP
Forward recovery voltage
I
F
= 30 A, dI
F
/dt = 100 A/µs,
V
FR
= 1.1 x V
Fmax
, T
j
= 25° C
2.9 V
Figure 1. Conduction losses versus average
current
Figure 2. Forward voltage drop versus forward
current
0
5
10
15
20
25
30
35
40
45
50
0 5 10 15 20 25 30 35 40
P
F(AV)
(W)
T
d
=tp/T
tp
I
F(AV)
(A)
d = 0.05
d = 0.1
d = 0.2
d = 0.5
d = 1










             
,
)0
$
7
-
&
0D[LPXPYDOXHV
7
-
&
0D[LPXPYDOXHV
7
-
&
7\SLFDO YDOXHV
7
-
&
7\SLFDO YDOXHV
7
-
&
0D[LPXPYDOXHV
7
-
&
0D[LPXPYDOXHV
9
)0
9
Figure 3. Relative variation of thermal
impedance junction to case versus pulse
duration
Figure 4. Peak reverse recovery current versus
dI
F
/dt (typical values)
0.1
1.0
1.E-03 1.E-02 1.E-01 1.E+00
Zth
(j-c)
/Rth
(j-c)
Single pulse
TO-220AC
DO-247
tp(s)
0
2
4
6
8
10
12
14
16
18
20
22
10 100 1000
I
RM
(A)
I
F
= 30 A
V
R
=320 V
T
j
=125° C
T
j
=25° C
dI
F
/dt(A/µs)

STTH30R04PI

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Rectifiers Recovery Diode Ultra Fast
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet