Product Standards
Transistors with Built-in Resistor
DRC3114Y0L
Absolute Maximum Ratings Ta = 25 C
Electrical Characteristics Ta = 25 C 3 C
Note
1.
Page
Collector-base voltage (Emitter open) VCBO
50 V
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Parameter Symbol Rating
Operating ambient temperature Topr
000
SOT-723
pcs / reel (standard)
Emitter
+85 °C
Unit
Panasonic
50 V
Marking Symbol:
NC
Code
1. Base
2.
Embossed type (Thermo-compression sealing) : 10
DRC3114Y0L
Silicon NPN epitaxial planar type
For digital circuits
Complementary to DRA3114Y
DRC9114Y in SSSMini3 type package
Features
Packaging
SSSMini3-F2-B
3. Collector
47
k
Resistance
value
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Low collector-emitter saturation voltage Vce(sat)
JEITA SC-105AA
Internal Connection
Collector-emitter voltage (Base open) VCEO
of
R1
10
k
R2
V
μA
μA
mA
3
Unit: mm
Min Typ
1
Total power dissipation PT
Collector current IC
-55 to
100
100
-40 to
mW
Junction temperature Tj 150 °C
+150 °C
Parameter Symbol Conditions
Storage temperature Tstg
Collector-emitter voltage (Base open) VCEO
IC = 2 mA, IB = 0 50
Max Unit
Collector-base voltage (Emitter open) VCBO
IC = 10 μA, IE = 0 50
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 50 V, IE = 0 0.1
Emitter-base cutoff current (Collector open)
IEBO
VEB = 6 V, IC = 0 0.2 mA
Collector-emitter cutoff current (Base open)
ICEO
Forward current transfer ratio hFE
VCE = 10 V, IC = 5 mA 80
0.5 VCE = 50 V, IB = 0
-
Collector-emitter saturation voltage VCE(sat)
IC = 10 mA, IB = 0.5 mA 0.25 V
Input voltage
Vi(on)
VCE = 0.2 V, IC = 5 mA
Vi(off)
VCE = 5 V, IC = 100 μA0.5V
1.7 V
Input resistance R1
-30% 10 +30%
k
Resistance ratio R1/R2
0.17 0.21 0.25 -
C
B
R
1
R
2
E
1.2
1.2
0.52
0.8
0.2
0.8
0.3
(0.4)
0.13
12
3
(0.4)
