POWERDI is a registered trademark of Diodes Incorporated.
DMN6013LFG
Document number: DS36958 Rev. 1 - 2
2 of 6
www.diodes.com
June 2014
© Diodes Incorporated
DMN6013LFG
ADVANCE INFORMATION
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
60 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
T
A
= +25°C
T
A
= +70°C
I
D
10.3
8.3
A
T
C
= +25°C
T
C
= +100°C
I
D
45
28
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
58.3 A
Maximum Continuous Body Diode Forward Current (Note 6)
I
S
3 A
Avalanche Current, L = 0.1mH
I
AS
33.3 A
Avalanche Energy, L = 0.1mH
E
AS
56.8 mJ
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
alue Units
Total Power Dissipation (Note 5)
P
D
1 W
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
θ
JA
123
°C/W
t < 10s 69
Total Power Dissipation (Note 6)
P
D
2.1 W
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θ
JA
60
°C/W
t < 10s 34
Total Power Dissipation (Note 6)
P
D
40 W
Thermal Resistance, Junction to Case (Note 6)
R
θ
JC
6.7 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
60 — — V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current, T
J
= +25°C I
DSS
— — 1 µA
V
DS
= 60V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— — ±100 nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1 1.8 3 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS(ON)
— 9.3 13
mΩ
V
GS
= 10V, I
D
= 10A
— 12.3 18
V
GS
= 4.5V, I
D
= 8A
Diode Forward Voltage
V
SD
— 0.7 1.2 V
V
GS
= 0V, I
S
= 1.7A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
—
2577
—
pF
V
DS
= 30V, V
GS
= 0V,
f = 1MHz
Output Capacitance
C
oss
—
162
—
pF
Reverse Transfer Capacitance
C
rss
—
132
—
pF
Gate Resistance
R
g
— 0.9 —
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
— 26.6 —
nC
V
DS
= 30V, I
D
= 10A
Total Gate Charge (V
GS
= 10V) Q
g
— 55.4 —
nC
Gate-Source Charge
Q
gs
— 9.3 —
nC
Gate-Drain Charge
Q
gd
— 12.6 —
nC
Turn-On Delay Time
t
D(on)
—
6.2
— ns
V
GS
= 10V, V
DS
= 30V,
R
G
= 3Ω, I
D
= 10A
Turn-On Rise Time
t
r
—
9.9
— ns
Turn-Off Delay Time
t
D(off)
—
27.6
— ns
Turn-Off Fall Time
t
f
—
11.7
— ns
Body Diode Reverse Recovery Time
t
rr
—
9.4 —
nS
I
F
= 10A, di/dt = 100A/μs
Body Diode Reverse Recovery Charge
Q
rr
—
18.6 —
nC
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
