JANTXV2N4238

TECHNICAL DATA

NPN MEDIUM POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/581

Devices Qualified Level

2N4237 2N4238 2N4239

JANTX

JANTXV

MAXIMUM RATINGS (T

A

= 25

0

C Unless Otherwise noted)

Ratings Symbol

2N4237

2N4238

2N4239

Units

Collector-Emitter Voltage

V

CEO

40 60 80 Vdc

Collector-Base Voltage

V

CBO

50 80 100 Vdc

Emitter-Base Voltage

V

EBO

6.0 Vdc

Collector Current

I

C

1.0 Adc

Base Current

I

B

0.5 Adc

Total Power Dissipation @ T

A

= +25

0

C

(1)

@ T

C

= +25

0

C

(2)

P

T

1.0

6.0

W

W

Operating & Storage Temperature Range

T

op

,

T

stg

-65 to +200

°C

THERMAL CHARACTERISTICS

Characteristics Symbol

Max. Unit

Thermal Resistance, Junction-to-Case

R

θJC

29

0

C/W

1) Derate linearly 5.7 mW/

0

C for T

A

> +25

0

C

2) Derate linearly 34 mW/

0

C for T

C

> +25

0

C

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (T

A

= 25

0

C unless otherwise noted)

Characteristics Symbol Min. Max. Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

I

C

= 100 mAdc 2N4237

2N4238

2N4239

V

(BR)CEO

50

80

100

Vdc

Emitter-Base Cutoff Current

V

EB

= 6.0 Vdc

I

EBO

0.5 mAdc

Collector-Emitter Cutoff Current

V

CE

= 90 Vdc, V

BE

= 1.5 Vdc

V

CE

= 50 Vdc 2N4237

V

CE

= 80 Vdc 2N4238

V

CE

= 10 Vdc 2N4239

I

CEX

100

100

100

nAdc

Collector-Base Cutoff Current

V

CE

= 50 Vdc 2N4237

V

CE

= 80 Vdc 2N4238

V

CE

= 10 Vdc 2N4239

I

CBO

100

100

100

nAdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

TO-39*

2N4237, 4238, 4239 JAN, JANTX, JANTXV

ELECTRICAL CHARACTERISTICS (con’t)

Characteristics Symbol Min. Max. Unit

ON CHARACTERISTICS

(3)

Forward Current Transfer Ratio

I

C

= 250 mAdc, V

CE

= 1.0 Vdc

I

C

= 500 mAdc, V

CE

= 1.0 Vdc

h

FE

30

30

150

Collector-Emitter Saturation Voltage

I

C

= 500 Adc, I

B

= 50 Adc

I

C

= 1.0 Adc, I

B

= 0.1 Adc

V

CE(sat)

0.3

0.6

Vdc

Base-Emitter Saturation Voltage

I

C

= 500 Adc, I

B

= 50 Adc

I

C

= 1.0 Adc, I

B

= 0.1 Adc

V

BE(sat)

1.0

1.5

Vdc

DYNAMIC CHARACTERISTICS

Magnitude of Common Emitter Small-Signal

Short Circuit Forward-Current Transfer Ratio

I

C

= 100 mAdc, V

CE

= 10 Vdc, f = 10 MHz

h

fe



3.0

Output Capacitance

V

CB

= 10 Vdc, I

E

= 0, f = 100 kHz

C

obo

100 pF

SAFE OPERATING AREA

DC Tests

T

C

= +25

0

C, 1 Cycle, t ≥ 0.5 s

Test 1

V

CE

= 6.0 Vdc, I

C

= 1.0 Adc

Test 2

V

CE

= 12 Vdc, I

C

= 500 mAdc

Test 3

V

CE

= 30 Vdc, I

C

= 166 mAdc 2N4237

V

CE

= 50 Vdc, I

C

= 100 mAdc 2N4238

V

CE

= 70 Vdc, I

C

= 71 mAdc 2N4239

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 2 of 2

JANTXV2N4238

Mfr. #:

Buy JANTXV2N4238

Manufacturer:

Microchip / Microsemi

Description:

Bipolar Transistors - BJT Power BJT

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