TSM2308
60V N-Channel MOSFET
Document Number:
DS_P0000049 1
Version: C15
V
(V) R
(mΩ) I
(A)
60
156 @ V
GS
= 10V 3
192 @ V
GS
= 4.5V 2.1
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● DC-DC Power System
● Load Switch
Ordering Information
Part No. Package
Packing
TSM2308CX RFG SOT-23 3Kpcs / 7” Reel
Note: “G” denotes Halogen Free Product.
Absolute Maximum Rating
(T
A
=25
o
C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
60 V
Gate-Source Voltage V
GS
±20 V
Continuous Drain Current I
D
3 A
Pulsed Drain Current I
DM
6 A
Continuous Source Current (Diode Conduction)
a,b
I
S
3 A
Maximum Power Dissipation
T
A
=25
o
C
P
D
1.25
W
T
A
=75
o
C 0.8
Operating Junction Temperature T
J
+150 °C
Operating Junction and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Thermal Performance
Parameter Symbol Limit Unit
Junction to Case Thermal Resistance RӨ
JC
80 °C/W
Junction to Ambient Thermal Resistance (PCB mounted) RӨ
JA
150 °C/W
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on a 1 in
2
pad of 2oz Cu, t ≤ 5 sec.
N-Channel MOSFET
1. Gate
2. Source
3. Drain
