PS22056 Datasheet PS22056 | P4-P6

MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>

PS22056

TRANSFER-MOLD TYPE

INSULATED TYPE

May 2005

3.4

3.2

3.0

2.2

—

0.9

3.8

0.9

1

10

1.28

1.70

0.047

mA

V

T

j = 25°C

T

j = 125°C

T

j = 25°C

T

j = 125°C

V

CE(sat)

VEC

ton

trr

tc(on)

toff

tc(off)

ICES

ConditionSymbol Parameter

Limits

Inverter IGBT part (per 1/6 module)

Inverter FWDi part (per 1/6 module)

Case to fin, (per 1 module) thermal grease applied

Rth(j-c)Q

Rth(j-c)F

Rth(c-f)

Min.

THERMAL RESISTANCE

Typ. Max.

—

Unit

–I

C = 25A, VIN = 0V

Condition

Symbol Parameter

Limits

Min. Typ. Max.

—

0.8

—

Unit

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)

INVERTER PART

Collector-emitter saturation

voltage

FWDi forward voltage

Junction to case thermal

resistance (Note 3)

VD = VDB = 15V

V

IN = 5V, IC = 25A

Switching times

V

CC = 600V, VD = VDB = 15V

I

C = 25A, Tj = 125°C, VIN = 0

↔

5V

Inductive load (upper-lower arm)

Collector-emitter cut-off

current

V

CE = VCES

2.7

2.5

1.5

0.3

0.6

2.8

0.6

—

V

µs

°C/W

CONTROL (PROTECTION) PART

Note 4 : Short circuit protection is functioning only at the low-arms. Please select the value of the external shunt resistor such that the SC trip-

level is less than 1.7 times device current rating.

5:Fault signal is output when the low-arms short circuit or control supply under-voltage protective functions operate. The fault output pulse-

width t

FO depends on the capacitance value of CFO according to the following approximate equation : CFO = 9.3 ✕ 10

-6

✕ tFO [F].

Symbol

I

D

VFOH

VFOL

VSC(ref)

IIN

UVDBt

UVDBr

UVDt

UVDr

tFO

Vth(on)

Vth(off)

Parameter Condition

Limits

Unit

Circuit current

Fault output voltage

Short circuit trip level

Supply circuit under-voltage

protection

Fault output pulse width

ON threshold voltage

OFF threshold voltage

V

D = VDB = 15V

V

IN = 5V

Total of V

P1-VPC, VN1-VNC

VUFB-VUFS, VVFB-VVFS, VWFB-VWFS

VSC = 0V, FO circuit pull-up to 5V with 10kΩ

V

SC = 1V, IFO = 1mA

T

j = 25°C, VD = 15V (Note 4)

V

IN = 5V

Trip level

Reset level

Trip level

Reset level

C

FO = 22nF (Note 5)

Applied between U

P, VP, WP-VPC, UN, VN, WN-VNC

—

4.9

—

0.43

0.7

10.0

10.5

10.3

10.8

1.6

2.0

0.8

—

0.48

1.5

—

2.4

3.0

1.4

3.70

1.30

3.50

1.30

—

1.10

0.53

2.0

12.0

12.5

13.0

—

4.2

2.0

Min. Typ. Max.

mA

V

mA

V

ms

V

D = VDB = 15V

V

IN = 0V

Total of V

P1-VPC, VN1-VNC

VUFB-VUFS, VVFB-VVFS, VWFB-VWFS

Tj ≤ 125°C

Note 3: Grease with good thermal conductivity and long-term endurance should be applied evenly with about +100µm~+200µm on the con-

tacting surface of DIP-IPM and heat-sink.

Input current

Contact thermal resistance

MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>

PS22056

TRANSFER-MOLD TYPE

INSULATED TYPE

May 2005

Note 6: Measurement point of heat-sink flatness

–

+

–

+

Measurement location

Heat-sink side

3.25mm

Mounting screw : M4

Condition

Parameter

Limits

Mounting torque

Weight

Heat-sink flatness

Min.

MECHANICAL CHARACTERISTICS AND RATINGS

Typ. Max.

0.98

—

–50

Unit

—

77

—

1.47

—

100

N·m

g

µm

Recommended 1.18 N·m

(Note 6)

V

V/µs

µs

kHz

Arms

Applied between P-NU, NV, NW

Applied between V

P1-VPC, VN1-VNC

Applied between VUFB-VUFS, VVFB-VVFS, VWFB-VWFS

For each input signal, TC ≤ 100°C

T

C ≤ 100°C, Tj ≤ 125°C

V

CC = 600V, VD = 15V, fC = 15kHz

P.F = 0.8, sinusoidal PWM

T

j ≤ 125°C, TC ≤ 100°C (Note 7)

(Note 8)

800

16.5

1

—

15

9.2

—

V

CC

VD

VDB

∆VD, ∆VDB

tdead

fPWM

IO

PWIN(on)

PWIN(off)

Condition

Symbol Parameter

Limits

Min. Typ. Max.

350

13.5

–1

3.3

—

1.5

Unit

RECOMMENDED OPERATION CONDITIONS

600

15.0

—

Note 7 : The output r.m.s. current value depends on the actual application conditions.

8:DIP-IPM might not make response to the input on signal with pulse width less than PWIN (on).

9:DIP-IPM might not make response or work properly if the input off signal pulse width is less than PWIN (off).

Minimum input pulse width

V

NC

Supply voltage

Control supply voltage

Control supply variation

Arm shoot-through blocking time

PWM input frequency

Allowable r.m.s. current

V

NC variation

V

5.0

–5.0

—

Between V

NC-NU, NV, NW (including surge)

350

≤ V

CC ≤ 800V,

13.5 ≤ V

D ≤ 16.5V,

13.5 ≤ V

DB ≤ 16.5V,

–20°C

≤ T

C ≤ 100°C,

N line wiring inductance less than

10nH

(Note 9)

Ic ≤ 25A

25 < Ic ≤ 42.5A

µs

2.1

2.3

—

MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>

PS22056

TRANSFER-MOLD TYPE

INSULATED TYPE

May 2005

Fig. 4 THE DIP-IPM INTERNAL CIRCUIT

DIP-IPM

U

OUT

UV

NO

VV

NO

V

OUT

W

OUT

WV

NO

CFO

GND

Fo

W

N

V

N

U

N

V

CC

HVIC3

HVIC2

HVIC1

LVIC

CFO CIN

CIN

W

V

U

P

HO

IN

COM

V

B

V

S

V

CC

HO

IN

COM

V

B

V

S

V

CC

HO

IN

COM

V

B

V

S

V

CC

Fo

W

N

V

N

U

N

W

P

V

P

U

P

V

NC

V

N1

V

P1

V

P1

V

P1

V

WFS

V

VFS

V

UFS

V

WFB

V

VFB

V

UFB

NU

NV

NW

IGBT1

IGBT2

IGBT3

IGBT4

IGBT5

IGBT6

Di1

Di2

Di3

Di4

Di5

Di6

V

PC

PS22056

PS22056

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