DS1250Y-70IND+

DS1250Y/AB
4 of 10
ABSOLUTE MAXIMUM RATINGS
Voltage on Any Pin Relative to Ground -0.3V to +6.0V
Operating Temperature
Commercial: 0°C to +70°C
Industrial: -40°C to +85°C
Storage Temperature
EDIP -40°C to +85°C
PowerCap -55°C to +125°C
Lead Temperature (soldering, 10s) +260°C
Soldering Temperature (reflow, PowerCap) +260°C
Note: EDIP is wave or hand soldered only.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect
reliability.
RECOMMENDED DC OPERATING CONDITIONS (T
A
: See Note 10)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
DS1250AB Power Supply
Voltage
V
CC
4.75 5.0 5.25 V
DS1250Y Power Supply Voltage V
CC
4.5 5.0 5.5 V
Logic 1 V
IH
2.2 V
CC
V
Logic 0 V
IL
0.0 +0.8 V
DC ELECTRICAL CHARACTERISTICS (V
CC
= 5V ±5% for DS1250AB)
(T
A
: See Note 10) (V
CC
= 5V ±10% for DS1250Y)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Input Leakage Current I
IL
-1.0 +1.0
µA
I/O Leakage Current
CE
V
IH
V
CC
I
IO
-1.0 +1.0
µA
Output Current @ 2.4V I
OH
-1.0 mA
Output Current @ 0.4V I
OL
2.0 mA
Standby Current
CE
=2.2V
I
CCS1
200 600 μA
Standby Current
CE
=V
CC
-0.5V
I
CCS2
50 150 μA
Operating Current I
CCO1
85 mA
Write Protection Voltage (DS1250AB) V
TP
4.50 4.62 4.75 V
Write Protection Voltage (DS1250Y) V
TP
4.25 4.37 4.5 V
CAPACITANCE (T
A
= +25°C)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Input Capacitance C
IN
5 10 pF
Input/Output Capacitance C
I/O
5 10 pF
DS1250Y/AB
5 of 10
AC ELECTRICAL C HAR AC TE R IS TIC S (V
CC
= 5V ±5% for DS1250AB)
(T
A
: See Note 10) (V
CC
= 5V ±10% for DS1250Y)
PARAMETER SYMBOL
DS1250AB-70
DS1250Y-70
UNITS NOTES
MIN MAX
Read Cycle Time t
RC
70 ns
Access Time t
ACC
70 ns
OE
to Output Valid
t
OE
35 ns
CE
to Output Valid
t
CO
70 ns
OE
or
CE
to Output Active
t
COE
5 ns 5
Output High-Z from Deselection t
OD
25 ns 5
Output Hold from Address Change t
OH
5 ns
Write Cycle Time t
WC
70 ns
Write Pulse Width t
WP
55 ns 3
Address Setup Time t
AW
0 ns
Write Recovery Time
t
WR1
t
WR2
5
15
ns
ns
12
13
Output High-Z from
WE
t
ODW
25 ns 5
Output Active from
WE
t
OEW
5 ns 5
Data Setup Time t
DS
30 ns 4
Data Hold Time
t
DH1
t
DH2
0
10
ns
ns
12
13
DS1250Y/AB
6 of 10
READ CYCLE
SEE NOTE 1
WRITE CYCLE 1
SEE NOTES 2, 3, 4, 6, 7, 8, and 12

DS1250Y-70IND+

Mfr. #:
Manufacturer:
Maxim Integrated
Description:
NVRAM 4096K NV SRAM
Lifecycle:
New from this manufacturer.
Delivery:
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