AOT11S65/AOB11S65/AOTF11S65
Symbol Min Typ Max Units
650 - -
700 750 -
- - 1
- 10 -
I
GSS
Gate-Body leakage current
- - ±100
nΑ
V
GS(th)
Gate Threshold Voltage
2.6 3.3 4 V
- 0.35 0.399 Ω
- 0.98 1.11 Ω
V
SD
- 0.82 - V
I
S
Maximum Body-Diode Continuous Current - - 11 A
I
SM
- - 45 A
C
iss
- 646 - pF
C
oss
- 42 - pF
C
o(er)
- 33 - pF
C
o(tr)
- 117 - pF
C
rss
- 1.1 - pF
R
g
- 18 - Ω
Q
g
- 13.2 - nC
Q
gs
- 3.2 - nC
Q
gd
- 4.3 - nC
t
D(on)
- 25 - ns
t
r
- 20 - ns
t
D(off)
- 77 - ns
t
f
- 19 - ns
t
rr
- 278
- ns
I
rm
- 22
- A
Q
rr
- 4.2
-
µC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Output Capacitance
Diode Forward Voltage
I
F
=5.5A,dI/dt=100A/µs,V
DS
=400V
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=100V, f=1MHz
Gate resistance
V
GS
=0V, V
DS
=0 to 480V, f=1MHz
Effective output capacitance, time
related
I
I
S
=5.5A,V
GS
=0V, T
J
=25°C
Input Capacitance
V
GS
=0V, V
DS
=100V, f=1MHz
Body Diode Reverse Recovery Time
Gate Source Charge
Turn-Off DelayTime
Effective output capacitance, energy
related
H
V
GS
=10V, V
DS
=400V, I
D
=5.5A,
R
G
=25Ω
Turn-Off Fall Time
Total Gate Charge
V
GS
=10V, V
DS
=480V, I
D
=5.5A
Gate Drain Charge
Body Diode Reverse Recovery Charge
I
F
=5.5A,dI/dt=100A/µs,V
DS
=400V
Maximum Body-Diode Pulsed Current
C
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Peak Reverse Recovery Current
I
F
=5.5A,dI/dt=100A/µs,V
DS
=400V
V
GS
=0V, V
DS
=0V, f=1MHz
SWITCHING PARAMETERS
R
DS(ON)
Static Drain-Source On-Resistance
I
DSS
V
GS
=10V, I
D
=5.5A, T
J
=150°C
V
GS
=10V, I
D
=5.5A, T
J
=25°C
V
DS
=5V,I
D
=250µA
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
µA
V
DS
=0V, V
GS
=±30V
BV
DSS
V
Drain-Source Breakdown Voltage
I
D
=250µA, V
GS
=0V, T
J
=25°C
V
DS
=650V, V
GS
=0V
V
DS
=520V, T
J
=150°C
Zero Gate Voltage Drain Current
I
D
=250µA, V
GS
=0V, T
J
=150°C
A. The value of R
θJA
is measured with the device in a still air environment with T
A
=25°C.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C, Ratings are based on low frequency and duty cycles to keep initial T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse ratin g.
G. L=60mH, I
AS
=2A, V
DD
=150V, Starting T
J
=25°C
H. C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS.
I. C
o(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS.
J. Wavesoldering only allowed at leads.
Rev1: Mar 2012 www.aosmd.com Page 2 of 7
