www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94032
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VS-8ETX06PbF, VS-8ETX06FPPbF
Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt
®
Fig. 5 - Maximum Thermal Impedance Z
thJC
Characteristics (FULL-PAK)
Fig. 6 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Maximum Allowable Case Temperature vs.
Average Forward Current (FULL-PAK)
Fig. 8 - Forward Power Loss Characteristics
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 8);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
See note (1)
Square wave (D = 0.50)
Rated V
R
applied
02468 12
180
170
160
150
140
130
120
I
F(AV)
(A) Average Forward Current
Allowable Case Temperature (°C)
10
DC
Allowable Case Temperature (°C)
DC
See note (1)
Square wave (D = 0.50)
Rated V
R
applied
140
100
60
40
180
02468 12
I
F(AV)
- Average Forward Current (A)
80
120
160
10
Average Power Loss (W)
0
2
DC
RMS limit
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
0 4 8 10 12 14
I
F(AV)
- Average Forward Current (A)
20
18
16
14
12
6
10
4
8
26
Document Number: 94032 For technical questions within your region, please contact one of the following: www.vishay.com
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, DiodesAsia@vishay.com, DiodesEurope@vishay.com 5
VS-8ETX06PbF, VS-8ETX06FPPbF
Hyperfast Rectifier, 8 A FRED Pt
®
Vishay Semiconductors
Fig. 9 - Typical Reverse Recovery Time vs. dI
F
/dt Fig. 10 - Typical Stored Charge vs. dI
F
/dt
Fig. 11 - Reverse Recovery Parameter Test Circuit
Fig. 12 - Reverse Recovery Waveform and Definitions
50
40
20
10
100
1000
dI
F
/dt (A/µs)
t
rr
(ns)
30
I
F
= 16 A
I
F
= 8 A
I
F
= 16 A
I
F
= 8 A
V
R
= 390 V
T
J
= 125 °C
T
J
= 25 °C
0
100 1000
Q
rr
(nC)
dI
F
/dt (A/µs)
100
200
300
I
F
= 16 A
I
F
= 8 A
50
150
250
V
R
= 390 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 16 A
I
F
= 8 A
IRFP250
D.U.T.
L = 70 μH
V
R
= 200 V
0.01 Ω
G
D
S
dI
F
/dt
adjust
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dI
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area under curve dened by t
rr
and I
RRM
t
rr
x I
RRM
2
Q
rr
=
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94032
6 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 29-Jun-10
VS-8ETX06PbF, VS-8ETX06FPPbF
Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt
®
ORDERING INFORMATION TABLE
Tube standard pack quantity: 50 pieces
2 - Current rating (8 = 8 A)
4
- T = TO-220, D
2
PAK
5
- X = Hyperfast rectifier
6
- Voltage rating (06 = 600 V)
7
-
8
-
PbF = Lead (Pb)-free
None = Standard production
3 - E = Single diode
1 - HPP product suffix
Device code
51 32 4 6 7 8
VS- 8 E T X 06 FP PbF
FP = TO-220 FULL-PAK
None = TO-220AC
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95039
Part marking information www.vishay.com/doc?95045
SPICE model www.vishay.com/doc?95393

8ETX06

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers RECOMMENDED ALT 78-VS-8ETX06-M3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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