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8ETX06FP

P1-P3P4-P6P7-P7
Document Number: 94032 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 29-Jun-10 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
Hyperfast Rectifier, 8 A FRED Pt
®
VS-8ETX06PbF, VS-8ETX06FPPbF
Vishay Semiconductors
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Fully isolated package (V
INS
= 2500 V
RMS
)
• UL E78996 approved
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION/APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recover time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in the
ac-to-dc section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
Package TO-220AC, TO-220FP
I
F(AV)
8 A
V
R
600 V
V
F
at I
F
3.0 V
t
rr
(typ.) 15 ns
T
J
max. 175 °C
Diode variation Single die
TO-220AC
TO-220 FULL-PAK
Anode
1
3
Cathode
Base
cathode
2
Anode
1
3
Cathode
8ETX06PbF 8ETX06FPPbF
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Repetitive peak reverse voltage V
RRM
600 V
Average rectified forward current I
F(AV)
T
C
= 143 °C
8
A
FULL-PAK T
C
= 106 °C
Non-repetitive peak surge current I
FSM
T
J
= 25 °C 110
Repetitive peak forward current I
FM
18
Operating junction and storage temperatures T
J
, T
Stg
- 65 to 175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 600 - -
V
Forward voltage V
F
I
F
= 8 A - 2.3 3.0
I
F
= 8 A, T
J
= 150 °C - 1.4 1.7
Reverse leakage current I
R
V
R
= V
R
rated - 0.3 50
μA
T
J
= 150 °C, V
R
= V
R
rated - 35 500
Junction capacitance C
T
V
R
= 600 V - 17 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8.0 - nH
* Pb containing terminations are not RoHS compliant, exemptions may apply
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94032
2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 29-Jun-10
VS-8ETX06PbF, VS-8ETX06FPPbF
Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt
®
DYNAMIC RECOVERY CHARACTERISTICS (T
C
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 15 19
ns
I
F
= 8 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 16 24
T
J
= 25 °C
I
F
= 8 A
dI
F
/dt = 200 A/μs
V
R
= 390 V
-17-
T
J
= 125 °C - 40 -
Peak recovery current I
RRM
T
J
= 25 °C - 2.3 -
A
T
J
= 125 °C - 4.5 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 20 -
nC
T
J
= 125 °C - 100 -
Reverse recovery time t
rr
T
J
= 125 °C
I
F
= 8 A
dI
F
/dt = 600 A/μs
V
R
= 390 V
-31-ns
Peak recovery current I
RRM
-12- A
Reverse recovery charge Q
rr
- 195 - nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDTIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 65 - 175 °C
Thermal resistance,
junction to case
R
thJC
-1.42
°C/W
(FULL-PAK) - 3.4 4.3
Thermal resistance,
junction to ambient per leg
R
thJA
Typical socket mount - - 70
Thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth and greased - 0.5 -
Weight
-2.0- g
-0.07- oz.
Mounting torque
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Marking device
Case style TO-220AC 8ETX06
Case style TO-220 FULL-PAK 8ETX06FP
Document Number: 94032 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 29-Jun-10 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
VS-8ETX06PbF, VS-8ETX06FPPbF
Hyperfast Rectifier, 8 A FRED Pt
®
Vishay Semiconductors
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
1
10
T
J
= 175 °C
T
J
= 150 °C
T
J
= 25 °C
100
0 0.5 2.51.5
1.0
3.0 3.5 4.02.0
V
F
- Forward Voltage Drop (V)
I
F
- Instantaneous
Forward Current (A)
4.5
0.1
0.001
0.01
0.1
1
10
100
1000
0 100 200 300 400 500 600
0.0001
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (µA)
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
T
J
= 25 °C
0
100 200 300 500 600400
1000
100
10
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
Single pulse
(thermal resistance)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
P1-P3P4-P6P7-P7

8ETX06FP

Mfr. #:
Buy 8ETX06FP
Manufacturer:
Vishay
Description:
DIODE GEN PURP 600V 8A TO220FP
Lifecycle:
New from this manufacturer.
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