Philips Semiconductors
GTL1655
16-bit LVTTL-to-GTL/GTL+ bus transceiver with live insertion
Product data Rev. 01 — 11 May 2004 10 of 23
9397 750 12936
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
9. Static characteristics
Table 10: DC characteristics
T
amb
=
40
°
C to +85
°
C; values otherwise stated V
REF
=1V; V
TT
= 1.5 V.
Symbol Parameter Conditions Min Typ
[1]
Max Unit
V
IK
input clamp voltage V
CC
= 3.0 V; I
IK
=19mA - - 1.2 V
V
OH
HIGH-level output
voltage
port A V
CC
= 3.0 V to 3.6 V;
I
OH
= 100 µA
V
CC
0.2 - - V
V
CC
= 3.0 V;
I
OH
= 12 mA
2.4 - - V
V
CC
= 3.0 V;
I
OH
= 24 mA
2.2 - - V
V
OL
LOW-level output
voltage
port A V
CC
= 3.0 to 3.6 V;
I
OL
= 100 µA
- - 0.2 V
V
CC
= 3.0 V;
I
OL
=12mA
- - 0.4 V
V
CC
= 3.0 V;
I
OL
=24mA
- - 0.55 V
port B V
CC
= 3.0 V;
I
OL
=40mA
- - 0.2 V
V
CC
= 3.0 V;
I
OL
=80mA
- - 0.4 V
V
CC
= 3.0 V;
I
OL
= 100 mA
- - 0.5 V
I
i
input leakage current control pins V
CC
= 3.6 V;
V
i
=V
CC
or GND
--± 10 µA
port B V
CC
= 3.6 V;
V
i
=V
TT
or GND
--± 10 µA
I
off
output OFF current port A +
control pin
V
CC
=0V;
V
o
= 0 V to 3.6 V
--± 100 µA
port B V
CC
=0V;
V
o
= 0 V to 1.5 V
--± 300 µA
I
HOLD
bus hold current,
A outputs
port A V
CC
= 3.0 V;
V
i
= 0.8 V
75 - - µA
V
CC
= 3.0 V;
V
i
= 2.0 V
75 - - µA
overdrive current port A V
CC
= 3.6 V;
V
i
=0VtoV
CC
[2]
--± 500 µA
I
OZH
HIGH OFF-state output
current
port B V
CC
= 3.6 V;
V
o
= 1.5 V
--10µA
I
OZL
LOW OFF-state
output current
port B V
CC
= 3.6 V;
V
o
= 0.4 V
--10 µA
I
OZ
OFF-state output
current
port A V
CC
= 3.6 V;
V
o
=V
CC
or GND
[3]
--10µA
I
OZPU
power-up 3-state output
current
V
CC
= 0 to 3.6 V; V
o
= 0.5 V to 3 V;
OE = LOW
--± 50 µA
I
OZPD
power-down 3-state
output current
V
CC
= 3.6 to 0 V; V
o
= 0.5 V to 3 V;
OE = LOW
--± 50 µA
Philips Semiconductors
GTL1655
16-bit LVTTL-to-GTL/GTL+ bus transceiver with live insertion
Product data Rev. 01 — 11 May 2004 11 of 23
9397 750 12936
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
[1] All typical values are measured at V
CC
= 3.3 V and T
amb
=25°C.
[2] This is the bus-hold maximum dynamic current. It is the minimum overdrive current required to switch the input from one state to
another.
[3] For I/O ports, this parameter I
OZ
includes the input leakage current.
[4] This is the increase in supply current for each input that is at the specified TTL voltage level rather than V
CC
or GND.
I
CC
quiescent supply
current
outputs
HIGH
V
CC
= 3.6 V;
V
i
=V
CC
or GND;
I
o
=0mA
--45mA
outputs
LOW
V
CC
= 3.6 V;
V
i
=V
CC
or GND;
I
o
=0mA
--45mA
disabled V
CC
= 3.6 V;
V
i
=V
CC
or GND;
I
o
=0mA
--45mA
I
CC
additional quiescent
supply current per input
pin; except port B
V
CC
= 3.6 V; one input at
V
CC
0.6 V; port A or control inputs
at V
CC
or GN D
[4]
- 0.1 - mA
C
i
input capacitance control pins V
CC
= 3.6 V;
V
i
=V
CC
or 0
- 35pF
C
IO
I/O capacitance port A V
CC
= 3.6 V;
V
i
=V
CC
or 0
- 78pF
port B V
CC
= 3.6 V;
V
i
=V
CC
or 0
- 8 10 pF
Table 10: DC characteristics
…continued
T
amb
=
40
°
C to +85
°
C; values otherwise stated V
REF
=1V; V
TT
= 1.5 V.
Symbol Parameter Conditions Min Typ
[1]
Max Unit
Table 11: Live insertion characteristics
T
amb
=
40
°
C to +85
°
C
Symbol Parameter Conditions Min Typ Max Unit
I
CC
(BIAS V
CC
)
supply current V
CC
= 0 V to 3.0 V; V (port B) = 0 to 1.2 V;
V
i
(BIAS V
CC
) = 3.0 V to 3.6 V
--5mA
V
CC
= 3.0 V to 3.6 V;
V (port B)=0to1.2V;
V
i
(BIAS V
CC
) = 3.0 V to 3.6 V
--10µA
V
o
output voltage port B V
CC
=0V;
V
i
(BIAS V
CC
) = 3.3 V
1 - 1.2 V
I
o
output current port B V
CC
= 0 V; V (port B) = 0.4 V;
V
i
(BIAS V
CC
)=3Vto3.6V
1- - µA
V
CC
=0Vto3.6V;OE = 3.3 V;
V (port B) = 0 V to 1.5 V
- - 300 µA
V
CC
=0Vto1.5V;
OE = 0 V to 3.3 V;
V (port B) = 0 V to 1.5 V
- - 300 µA
Philips Semiconductors
GTL1655
16-bit LVTTL-to-GTL/GTL+ bus transceiver with live insertion
Product data Rev. 01 — 11 May 2004 12 of 23
9397 750 12936
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
10. Dynamic characteristics
Table 12: Timing requirements over recommended supply voltage
V
TT
= 1.2 V; V
REF
= 0.8 V and V
ERC
=V
CC
or GND for GTL (unless otherwise noted; see Figures 15 and 16).
T
amb
=
40
°
C to +85
°
C.
Symbol Parameter Conditions Min Typ Max Unit
t
W
pulse duration CP HIGH or LOW; see Figures 4 and 5 3.0 - - ns
LE HIGH; see Figures 6 and 7 3.0 - - ns
t
su
set-up time data before CP; see Figures 4 and 5 2.7 - - ns
data before LE↓; see Figures 6 and 7 2.8 - - ns
t
h
hold time data after CP; see Figures 4 and 5 0.4 - - ns
data after LE↓; see Figures 6 and 7 1.2 - - ns
Table 13: Port A to Port B switching
V
TT
= 1.2 V; V
REF
= 0.8 V and V
ERC
=V
CC
or GND for GTL (see Figure 16).
T
amb
=
40
°
C to +85
°
C.
Symbol Parameter Conditions Min Typ Max Unit
t
PLH
A to B OEAB = OE=0V;
LEAB = 3 V
V
ERC
=V
CC
;
see Figure 10
3.1 5.3 6.2 ns
t
PHL
2.2 3.8 6.2 ns
t
PLH
CP to B OEAB = OE=0V;
LEAB = 0 V
V
ERC
=V
CC
;
see Figure 4
3.4 5.9 7.2 ns
t
PHL
2.4 4.1 6.0 ns
t
PLH
LEAB to B OEAB = OE=0V;
CP = 0 or 3 V
V
ERC
=V
CC
;
see Figure 8
3.3 5.7 7.0 ns
t
PHL
2.6 4.6 6.8 ns
t
PLH
OEAB or OE to B LEAB = 3.0 V;
Port A = 0 V
V
ERC
=V
CC
;
see Figure 12
2.7 5.3 6.5 ns
t
PHL
2.5 3.9 6.4 ns
t
PLH
A to B OEAB = OE=0V;
LEAB = 3 V
V
ERC
= GND;
see Figure 10
2.3 4.4 5.3 ns
t
PHL
1.7 2.7 4.4 ns
t
PLH
CP to B OEAB = OE=0V;
LEAB = 0 V
V
ERC
= GND;
see Figure 4
2.7 5.2 6.1 ns
t
PHL
1.8 3.7 5.3 ns
t
PLH
LEAB to B OEAB = OE=0V;
CP = 0 or 3 V
V
ERC
= GND;
see Figure 8
2.5 4.8 6.5 ns
t
PHL
2.0 3.6 5.3 ns
t
PLH
OEAB or OE to B LEAB = 3.0 V;
Port A = 0 V
V
ERC
= GND;
see Figure 12
2.0 4.8 6.2 ns
t
PHL
2.0 3.1 4.9 ns
V/t output slew rate 0.6 V to 1.0 V V
ERC
=V
CC
- - 1 V/ns
V
ERC
= GND - - 1 V/ns
t
sk(o)
output edge skew measured at V
REF
--1ns

GTL1655DGG,512

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
IC TRNSLTR BIDIRECTIONAL 64TSSOP
Lifecycle:
New from this manufacturer.
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