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IXTV26N50P

P1-P3P4-P5
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTQ 26N50P IXTT 26N50P
IXTV 26N50P IXTV26N50PS
Fig. 7. Input Admittance
0
5
10
15
20
25
30
35
40
45
50
3.5 4 4.5 5 5.5 6 6.5 7
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
5
10
15
20
25
30
35
40
45
50
0 5 10 15 20 25 30 35 40 45 50 55 60
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
10
20
30
40
50
60
70
80
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20 25 30 35 40 45 50 55 60 65
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 250V
I
D
= 13A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
10 100 1000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
25µs
1ms
100µs
R
DS(on)
Limit
10ms
DC
© 2006 IXYS All rights reserved
TO-268 (IXTT) Outline
IXTQ 26N50P IXTT 26N50P
IXTV 26N50P IXTV26N50PS
Fig. 13. Maximum Transient Thermal Resistance
0.010
0.100
1.000
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
R
(th)JC
- ºC / W
P1-P3P4-P5

IXTV26N50P

Mfr. #:
Buy IXTV26N50P
Manufacturer:
Description:
MOSFET N-CH 500V 26A PLUS220
Lifecycle:
New from this manufacturer.
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