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20080523b
IXKR 47N60C5
IXYS reserves the right to change limits, test conditions and dimensions.
Advanced Technical Information
V
DSS
= 600 V
I
D25
= 47 A
R
DS(on) max
= 45 mΩ
CoolMOS
™
1)
Power MOSFET
MOSFET
Symbol Conditions Maximum Ratings
V
DSS
T
VJ
= 25°C 600 V
V
GS
±
20
V
I
D25
I
D90
T
C
= 25°C
T
C
= 90°C
47
32
A
A
E
AS
E
AR
single pulse
repetitive
1950
3
mJ
mJ
dV/dt
MOSFET dV/dt ruggedness V
DS
= 0...480 V 50 V/ns
D
G
S
Electrically isolated back surface
2500 V electrical isolation
N-Channel Enhancement Mode
Low R
DSon
, high V
DSS
MOSFET
Ultra low gate charge
I
D
= 11 A; T
C
= 25°C
Symbol wiConditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specifi ed)
min. typ. max.
R
DSon
V
GS
= 10 V; I
D
= 44 A 40 45
mΩ
V
GS(th)
V
DS
= V
GS
; I
D
= 3 mA 2.5 3 3.5 V
I
DSS
V
DS
= V
DSS
;
V
GS
= 0 V T
VJ
= 25°C
T
VJ
= 150°C 50
10 µA
µA
I
GSS
V
GS
=
±
20 V; V
DS
= 0 V
100 nA
C
iss
C
oss
V
GS
= 0 V; V
DS
= 100 V
f = 1 MHz
6800
320
pF
pF
Q
g
Q
gs
Q
gd
V
GS
= 0 to 10 V; V
DS
= 400 V; I
D
= 44 A
150
35
50
190 nC
nC
nC
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 10 V; V
DS
= 400 V
I
D
= 44 A; R
G
= 3.3 Ω
30
20
100
10
ns
ns
ns
ns
R
thJC
R
thCH
with heatsink compound 0.25
0.45 K/W
K/W
Features
• Silicon chip on Direct-Copper-Bond
substrate
- high power dissipation
- isolated mounting surface
- 2500 V electrical isolation
- low drain to tab capacitance (< 30 pF)
• Fast CoolMOS
™
1)
power MOSFET 4
th
generation
- high blocking capability
- lowest resistance
- avalanche rated for unclamped
inductive switching (UIS)
- low thermal resistance
due to reduced chip thickness
• Enhanced total power density
Applications
• Switched mode power supplies
(SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
• PDP and LCD adapter
Advantages
• Easy assembly:
no screws or isolation foils required
• Space savings
• High power density
• High reliability
1)
CoolMOS
™
is a trademark of
Infi neon Technologies AG.
ISOPLUS247
TM
G
D
S
isolated back
surface
q
E72873
