NGTB40N120FL3WG
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7
TYPICAL CHARACTERISTICS
Figure 19. Reverse Bias Safe Operating Area Figure 20. t
rr
vs. di
F
/dt
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
di
F
/dt, DIODE CURRENT SLOPE (A/ms)
1K100101
1
10
100
1000
900700 1100500300100
0
50
100
150
250
Figure 21. Q
rr
vs. di
F
/dt Figure 22. I
rm
vs. di
F
/dt
di
F
/dt, DIODE CURRENT SLOPE (A/ms) di
F
/dt, DIODE CURRENT SLOPE (A/ms)
900 1100700500300100
0
1.0
3.5
900700300100
0
10
20
40
50
Figure 23. V
F
vs. T
J
T
J
, JUNCTION TEMPERATURE (°C)
1007550250−25−50−75
1.0
2.0
4.5
I
C
, COLLECTOR CURRENT (A)
t
rr
, REVERSE RECOVERY TIME (ns)
Q
rr
, REVERSE RECOVERY CHARGE (mC)
I
rm
, REVERSE RECOVERY CURRENT (A)
V
F
, FORWARD VOLTAGE (V)
10K
200
500 1100
150
300
350
30
200
V
GE
= 15 V, T
C
= 175°C
T
J
= 25°C, I
F
= 40 A
T
J
= 175°C, I
F
= 40 A
T
J
= 25°C, I
F
= 40 A
T
J
= 175°C, I
F
= 40 A
T
J
= 25°C, I
F
= 40 A
T
J
= 175°C, I
F
= 40 A
0.5
1.5
2.5
2.0
3.0
I
C
= 75 A
I
C
= 40 A
I
C
= 20 A
1.5
125 175
2.5
3.0
3.5
4.0
V
R
= 400 V
V
R
= 400 V
V
R
= 400 V
