NXP Semiconductors
BYC8-600P
Hyperfast power diode
BYC8-600P All information provided in this document is subject to legal disclaimers. © NXP N.V. 2014. All rights reserved
Product data sheet 3 January 2014 3 / 9
Symbol Parameter Conditions Min Max Unit
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave
pulse; Fig. 4
- 91 AI
FSM
non-repetitive peak forward
current
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave
pulse; Fig. 4
- 100 A
T
stg
storage temperature -65 175 °C
T
j
junction temperature - 175 °C
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I
F(AV)
(A)
0 1284
8
16
24
P
tot
(W)
0
δ
= 1
0.5
0.2
0.1
Fig. 1. Forward power dissipation as a function of
average forward current; square waveform;
maximum values
I
F(AV)
(A)
0 862 4
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8
12
4
16
20
P
tot
(W)
0
a = 1.57
1.9
2.2
2.8
4.0
Fig. 2. Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
T
mb
(°C)
-50 20015050 1000
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4
8
12
I
F(AV)
(A)
0
130 °C
Fig. 3. Average forward current as a function of
mounting base temperature; maximum values
t
p
(s)
10
-5
10
-2
10
-3
10
-4
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10
3
10
2
10
4
I
FSM
(A)
10
t
p
P
t
Fig. 4. Non-repetitive peak forward current as a
function of pulse width; square waveform;
maximum values
