IRFP4310ZPBF

IRFP4310ZPbF
4 www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 10. Drain-to-Source Breakdown Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 11. Typical C
OSS
Stored Energy
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
SD
, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 175°C
V
GS
= 0V
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T
J
, Junction Temperature (°C)
90
100
110
120
130
V
(
B
R
)
D
S
S
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
I
D
= 5mA
0 20 40 60 80 100
V
DS,
Drain-to-Source Voltage (V)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
E
n
e
r
g
y
(
μ
J
)
25 50 75 100 125 150 175
Starting T
J
, Junction Temperature (°C)
0
100
200
300
400
500
600
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP
11A
19A
BOTTOM
75A
0.1 1 10 100
V
DS
, Drain-toSource Voltage (V)
0.1
1
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
100μsec
DC
25 50 75 100 125 150 175
T
C
, Case Temperature (°C)
0
20
40
60
80
100
120
140
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
LIMITED BY PACKAGE
IRFP4310ZPbF
www.irf.com 5
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 14. Typical Avalanche Current vs.Pulsewidth
Fig 15. Maximum Avalanche Energy vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 14).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) = DT/ Z
thJC
I
av
=
2DT/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
Ri (°C/W)
τι (sec)
0.018756 0.000373
0.159425 0.000734
0.320725 0.005665
0.101282 0.115865
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci
i
/
Ri
Ci= τi/Ri
τ
τ
C
τ
4
τ
4
R
4
R
4
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.1
1
10
100
A
v
a
l
a
n
c
h
e
C
u
r
r
e
n
t
(
A
)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
ΔΤ
j = 25°C and
Tstart = 150°C.
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Δ
Tj = 150°C and
Tstart =25°C (Single Pulse)
25 50 75 100 125 150 175
Starting T
J
, Junction Temperature (°C)
0
20
40
60
80
100
120
140
E
A
R
,
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
TOP Single Pulse
BOTTOM 1% Duty Cycle
I
D
= 75A
1E-006 1E-005 0.0001 0.001 0.01 0.1
t
1
, Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W)
τι
(sec)
0.01688 0.000007
0.143482 0.000117
0.288653 0.001817
0.091153 0.011735
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci
i
/
Ri
Ci= τi/Ri
τ
τ
C
τ
4
τ
4
R
4
R
4
IRFP4310ZPbF
6 www.irf.com
Fig. 17 - Typical Recovery Current vs. di
f
/dt
Fig 16. Threshold Voltage Vs. Temperature
Fig. 19 - Typical Stored Charge vs. di
f
/dtFig. 18 - Typical Recovery Current vs. di
f
/dt
Fig. 20 - Typical Stored Charge vs. di
f
/dt
-75 -50 -25 0 25 50 75 100 125 150 175
T
J
, Temperature ( °C )
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 1.0A
I
D
= 1.0mA
I
D
= 250μA
ID = 150μA
100 200 300 400 500 600 700 800 900 1000
di
f
/ dt - (A / μs)
0
4
8
12
16
20
24
I
R
R
M
-
(
A
)
I
F
= 30A
V
R
= 85V
T
J
= 125°C
T
J
= 25°C
100 200 300 400 500 600 700 800 900 1000
di
f
/ dt - (A / μs)
0
100
200
300
400
500
600
Q
R
R
-
(
n
C
)
I
F
= 45A
V
R
= 85V
T
J
= 125°C
T
J
= 25°C
100 200 300 400 500 600 700 800 900 1000
di
f
/ dt - (A / μs)
0
100
200
300
400
500
600
Q
R
R
-
(
n
C
)
I
F
= 30A
V
R
= 85V
T
J
= 125°C
T
J
= 25°C
100 200 300 400 500 600 700 800 900 1000
di
f
/ dt - (A / μs)
0
4
8
12
16
20
24
I
R
R
M
-
(
A
)
I
F
= 45A
V
R
= 85V
T
J
= 125°C
T
J
= 25°C

IRFP4310ZPBF

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 100V 127A 6mOhm 120nC Qg
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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