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BSC025N03LSGATMA1

P1-P3P4-P6P7-P9P10-P10
BSC025N03LS G
13 Avalanche characteristics 14 Typ. gate charge
I
AS
=f(t
AV
); R
GS
=25 Ω
V
GS
=f(Q
gate
); I
D
=30 A pulsed
parameter: T
j(start)
parameter: V
DD
15 Drain-source breakdown voltage 16 Gate charge waveforms
V
BR(DSS)
=f(T
j
); I
D
=1 mA
20
22
24
26
28
30
32
34
-60 -20 20 60 100 140 180
T
j
[°C]
V
BR(DSS)
[V]
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
25 °C
100 °C
125 °C
1
10
100
1 10 100 1000
t
AV
[µs]
I
AV
[A]
6 V
15 V
24 V
0
2
4
6
8
10
12
0 10203040506070
Q
gate
[nC]
V
GS
[V]
Rev. 1.6 page 7 2009-10-22
BSC025N03LS G
Package Outline PG-TDSON-8
PG-TDSON-8: Outline
Rev. 1.6 page 8 2009-10-22
BSC025N03LS G
Package Outline
PG-TDSON-8: Tape
Dimensions in mm
Rev. 1.6 page 9 2009-10-22
P1-P3P4-P6P7-P9P10-P10

BSC025N03LSGATMA1

Mfr. #:
Buy BSC025N03LSGATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
Lifecycle:
New from this manufacturer.
Delivery:
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