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CD216A-B140LF

P1-P3P4-P6P7-P7
CD216A-B120L~B140 MITE Chip Diode
Rating & Characteristic Curves: CD216A-B120R
Forward Characteristics Reverse Characteristics
Derating Curve Capacitance Between Terminals
10
0.1
Forward Current (Amps)
0.2 0.4 0.6 0.8
Forward Volta
g
e
(
Volts
)
1
Ta = 25 °C
Pulsewidth: 300 µs
25 °C100 °C125 °C
1000
0.01
Reverse Current (µA)
0 5 10 15 20 25
Reverse Voltage (Volts)
0.1
1
10
100
125 °C
100 °C
25 °C
1.25
1.00
0.75
0.50
0.25
0.00
25 50 75 100 125 150
Average Forward Current (Amps)
Lead Temperature (°C)
Single Phase Half Wave 60 Hz
Resistive or Inductive Load
150
25
50
75
100
125
0
010203040
Capacitance (pF)
Reverse Voltage (Volts)
F = 1 MHz
Ta = 25 °C
Specifi cations are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specifi c applications.
CD216A-B120L~B140 MITE Chip Diode
Rating & Characteristic Curves: CD216A-B130L
Forward Characteristics Reverse Characteristics
Derating Curve Capacitance Between Terminals
10
0.1
Forward Current (Amps)
0 0.2 0.4 1
Forward Voltage (Volts)
0.6 0.8
1
Ta = 25 °C
Pulsewidth: 300 µs
25 °C
100 °C
125 °C
100
0.001
Reverse Current (µA)
0 5 10 15 20 35
Reverse Voltage (Volts)
25 30
0.01
0.1
1
10
125 °C
100 °C
25 °C
1.25
1.00
0.75
0.50
0.25
0.00
25 50 75 100 125 150
Average Forward Current (Amps)
Lead Temperature (°C)
Single Phase Half Wave 60 Hz
Resistive or Inductive Load
150
25
50
75
100
125
0
010203040
Capacitance (pF)
Reverse Voltage (Volts)
F = 1 MHz
Ta = 25 °C
Specifi cations are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specifi c applications.
CD216A-B120L~B140 MITE Chip Diode
Rating & Characteristic Curves: CD216A-B140
Forward Characteristics Reverse Characteristics
Derating Curve Capacitance Between Terminals
10
0.1
Forward Current (Amps)
0 0.2 0.4 1
Forward Voltage (Volts)
0.6 0.8
1
Ta = 25 °C
Pulsewidth: 300 µs
25 °C
100 °C
125 °C
10
0.0001
Reverse Current (mA)
0 5 10 15 20 45
Reverse Voltage (Volts)
25 30 35 40
0.001
0.01
0.1
1
125 °C
100 °C
25 °C
1.25
1.00
0.75
0.50
0.25
0.00
25 50 75 100 125 150
Average Forward Current (Amps)
Lead Temperature (°C)
Single Phase Half Wave 60 Hz
Resistive or Inductive Load
150
25
50
75
100
125
0
010203040
Capacitance (pF)
Reverse Voltage (Volts)
F = 1 MHz
Ta = 25 °C
Specifi cations are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specifi c applications.
P1-P3P4-P6P7-P7

CD216A-B140LF

Mfr. #:
Buy CD216A-B140LF
Manufacturer:
Bourns
Description:
Schottky Diodes & Rectifiers MITE CHIP DIODE 40VOLT
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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