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MBR3580

P1-P2
V
RRM
= 20 V - 100 V
I
F
= 35 A
Features
• High Surge Capability DO-4 Package
• Types up to 100 V V
RRM
Parameter Symbol MBR3545 (R) MBR3560 (R) Unit
Re
p
etitive
p
eak reverse volta
g
e
V
RRM
45 60 V
Conditions
100
MBR3545 thru MBR35100R
MBR35100 (R)
80
MBR3580 (R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Silicon Power
Schottk
y
Diode
pp g
RMS reverse voltage
V
RMS
32 42 V
DC blocking voltage
V
DC
45 60 V
Continuous forward current
I
F
35 35 A
Operating temperature
T
j
-55 to 150 -55 to 150 °C
Storage temperature
T
stg
-55 to 175 -55 to 175 °C
Parameter Symbol MBR3545 (R) MBR3560(R) Unit
Diode forward voltage 0.68 0.75
1.5 1.5
25 25
Thermal characteristics
Thermal resistance, junction -
case
R
thJC
1.5 1.5 °C/W
-55 to 150 -55 to 150
T
C
= 25 °C, t
p
= 8.3 ms
70
10080
-55 to 175
MBR35100 (R)
1.5 1.5
MBR3580 (R)
1.5
V
R
= 20 V, T
j
= 125 °C
1.5
0.84 0.84
25
mA
V
V
R
= 20 V, T
j
= 25 °C
I
F
= 35 A, T
j
= 25 °C
T
C
≤ 110 °C
Conditions
57
600 600
-55 to 175
35 35
600
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
Reverse current
I
R
V
F
25
A600
www.genesicsemi.com
1
MBR3545 thru MBR35100R
www.genesicsemi.com
2
P1-P2

MBR3580

Mfr. #:
Buy MBR3580
Manufacturer:
GeneSiC Semiconductor
Description:
Schottky Diodes & Rectifiers 80V - 35A Schottky Rectifier
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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