VS-60CPU04-F3

VS-60CPU04-F3, VS-60CPU04-N3
www.vishay.com
Vishay Semiconductors
Revision: 18-Oct-16
1
Document Number: 93189
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultrafast Rectifier, 2 x 30 A FRED Pt
®
FEATURES
Low forward voltage drop
175 °C operating junction temperature
Ultrafast recovery time
Low leakage current
Designed and qualified according to
JEDEC
®
-JESD 47
Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
VS-60CPU04... series are the state of the art ultrafast
recovery rectifiers designed with optimized performance of
forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, welding, UPS, DC/DC converters as well as
freewheeling diodes in low voltage inverters, and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
Package TO-247AC
I
F(AV)
2 x 30 A
V
R
400 V
V
F
at I
F
0.92 V
t
rr
typ. 37 ns
T
J
max. 175 °C
Diode variation Common cathode
Base
common
cathode
Common
cathode
2
2
13
A
node
1
Anode
2
TO-247AC
Available
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage V
RRM
400 V
Average rectified forward current
per leg
I
F(AV)
Rated V
R
, T
C
= 134 °C
30
A
per device 60
Non-repetitive peak surge current per leg I
FSM
T
J
= 25 °C 300
Peak repetitive forward current per leg I
FM
Rated V
R
, square wave, 20 kHz, T
C
= 134 °C 60
Operating junction and storage temperatures T
J
, T
Stg
-65 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 400 - -
V
Forward voltage V
F
I
F
= 30 A - 1.10 1.30
I
F
= 30 A, T
J
= 150 °C - 0.92 1.10
I
F
= 60 A - 1.25 1.6
I
F
= 60 A, T
J
= 150 °C - 1.10 1.4
Reverse leakage current I
R
V
R
= V
R
rated - - 10
μA
T
J
= 150 °C, V
R
= V
R
rated - - 100
Junction capacitance C
T
V
R
= 400 V - 40 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 12 - nH
VS-60CPU04-F3, VS-60CPU04-N3
www.vishay.com
Vishay Semiconductors
Revision: 18-Oct-16
2
Document Number: 93189
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1.0 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 37 40
ns
I
F
= 1.0 A, dI
F
/dt = 50 A/μs, V
R
= 30 V - 46 -
T
J
= 25 °C
I
F
= 30 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
-65-
T
J
= 125 °C - 119 -
Peak recovery current I
RRM
T
J
= 25 °C - 6.4 -
A
T
J
= 125 °C - 14.7 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 206 -
nC
T
J
= 125 °C - 874 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and
storage temperature range
T
J
, T
Stg
-65 - +175 °C
Thermal resistance,
junction to case per leg
R
thJC
-0.61.0
°C/W
Thermal resistance,
junction to ambient per leg
R
thJA
Typical socket mount - - 40
Thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth, and greased - 0.5 -
Weight
-6-g
-0.21- oz.
Mounting torque
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Marking device Case style TO-247AC 60CPU04
I
F
- Instantaneous Forward Current (A)
V
F
- Forward Voltage Drop (V)
0.4 0.6 1.0 1.40.8 1.2 1.6 1.8 2.0
1
10
1000
100
93189_01
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
I
R
- Reverse Current (μA)
V
R
- Reverse Voltage (V)
50 100 150 200 350300250 400
0.001
0.01
0.1
1
10
100
1000
93189_02
T
J
= 125 °C
T
J
= 175 °C
T
J
= 150 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
VS-60CPU04-F3, VS-60CPU04-N3
www.vishay.com
Vishay Semiconductors
Revision: 18-Oct-16
3
Document Number: 93189
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
0 50 100 200 250150 300
10
1000
100
93189_03
0.001
0.01
0.1
1
10
0.00001
93189_04
0.0001 0.001 0.01 0.1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
1
Single pulse
(thermal resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
20151053025 35 40
45
0
140
160
180
100
120
93189_05
Square wave (D = 0.50)
Rated V
R
applied
See note (1)
DC
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
35 4025155302010
45
0
93189_06
40
60
50
0
20
30
10
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
RMS limit

VS-60CPU04-F3

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 2x30A 400V Ultrafast 37ns FRED Pt
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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