IXYL60N450 Datasheet IXYL60N450 | P1-P3

IXYL60N450

V

CES

= 4500V

I

C110

= 38A

V

CE(sat)







3.30V

DS100578A(4/16)

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

BV

CES

I

C

= 250μA, V

GE

= 0V 4500 V

V

GE(th)

I

C

= 250μA, V

CE

= V

GE

3.0 5.0 V

I

CES

V

CE

= 4000V,

V

GE

= 0V 25 μA

Note 1, T

J

= 90°C 75 μA

I

GES

V

CE

= 0V, V

GE

= ±20V ±300 nA

V

CE(sat)

I

C

= 60A, V

GE

= 15V, Note 1 2.64 3.30 V

T

J

= 125°C 3.46 V

High Voltage

XPT

TM

IGBT

G = Gate E = Emitter

C = Collector

ISOPLUS i5-Pak

TM

G

E

C

Isolated Tab

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 150°C 4500 V

V

CGR

T

J

= 25°C to 150°C, R

GE

= 1M 4500 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

T

C

= 25°C 90 A

I

C110

T

C

= 110°C 38 A

I

CM

T

C

= 25°C, 1ms 680 A

SSOA V

GE

= 15V, T

VJ

= 125°C, R

G

= 4.7 I

CM

= 120 A

(RBSOA) Clamped Inductive Load 1500 V

P

C

T

C

= 25°C 417 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

Maximum Lead Temperature for Soldering 300 °C

T

SOLD

Plastic Body for 10s 260 °C

F

C

Mounting Force 40..120 / 9..27 N/lb

V

ISOL

50/60 Hz, RM, t = 1min 4000 V~

Weight 8 g

(Electrically Isolated Tab)

Features



Silicon Chip on Direct-Copper Bond

(DCB) Substrate



Isolated Mounting Surface



4000V~ Electrical Isolation



High Blocking Voltage



High Peak Current Capability



Low Saturation Voltage

Advantages



Low Gate Drive Requirement



High Power Density

Applications



Switch-Mode and Resonant-Mode

Power Supplies



Uninterruptible Power Supplies (UPS)



Laser Generators



Capacitor Discharge Circuits



AC Switches

Preliminary Technical Information

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYL60N450

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

ISOPLUS i5-Pak

TM

(IXYL) Outline

1 = Gate

2 = Source

3 = Drain

4 = Isolated

SYM INCHES MILLIMETER

MIN MAX MIN MAX

A 0.190 0.205 4.83 5.21

A1 0.102 0.118 2.59 3.00

A2 0.046 0.055 1.17 1.40

b 0.045 0.055 1.14 1.40

b1 0.063 0.072 1.60 1.83

b2 0.058 0.068 1.47 1.73

c 0.020 0.029 0.51 0.74

D 1.020 1.040 25.91 26.42

E 0.770 0.799 19.56 20.29

e 0.150 BSC 3.81 BSC

e1 0.450 BSC 11.43 BSC

L 0.780 0.820 19.81 20.83

L1 0.080 0.102 2.03 2.59

Q 0.210 0.235 5.33 5.97

Q1 0.490 0.513 12.45 13.03

R 0.150 0.180 3.81 4.57

R1 0.100 0.130 2.54 3.30

S 0.668 0.690 16.97 17.53

T 0.801 0.821 20.34 20.85

U 0.065 0.080 1.65 2.03

E

S

b1

D

b2

Q

Q1

U

T

A1

e1

c

R

R1

A2

L1

L

1

3

2

4

b

A

e

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

g

fS

I

C

= 60A, V

CE

= 10V, Note 1 32 54 S

C

ies

7530 pF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 270 pF

C

res

115 pF

R

Gi

Integrated Gate Input Resistance 5.0

Q

g(on)

366 nC

Q

ge

I

C

= 60A, V

GE

= 15V, V

CE

= 1000V 48 nC

Q

gc

138 nC

t

d(on)

55 ns

t

r

450 ns

t

d(off)

450 ns

t

f

1360 ns

t

d(on)

60 ns

t

r

664 ns

t

d(off)

510 ns

t

f

1070 ns

R

thJC

0.30 °C/W

R

thCS

0.15 °C/W

Resistive Switching Times, T

J

= 125°C

I

C

= 60A, V

GE

= 15V

V

CE

= 960V, R

G

= 4.7

Resistive Switching Times, T

J

= 25°C

I

C

= 60A, V

GE

= 15V

V

CE

= 960V, R

G

= 4.7

Notes:

1. Pulse test, t < 300s, duty cycle, d < 2%.

2. Device must be heatsunk for high-temperature leakage current

measurements to avoid thermal runaway.

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

IXYL60N450

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

20

40

60

80

100

120

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5

V

CE

- Volts

I

C

- Amperes

V

GE

= 25V

19V

15V

13V

11V

7V

5V

9V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

50

100

150

200

250

300

0 5 10 15 20 25

V

CE

- Volts

I

C

-

Amperes

V

GE

= 25V

19V

15V

13V

7V

9V

11V

Fig. 3. Output Characteristics @ T

J

= 125ºC

0

20

40

60

80

100

120

0123456

V

CE

- Volts

I

C

- Amperes

V

GE

= 25V

19V

15V

13V

11V

5V

7V

9V

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 120A

I

C

= 30A

I

C

= 60A

Fig. 5. Collector-to-Emitter Voltage

vs. Gate-to-Emitter Voltage

1

2

3

4

5

6

7

6 7 8 9 101112131415

V

GE

- Volts

V

CE

- Volts

I

C

= 120A

T

J

= 25ºC

60A

30A

Fig. 6. Input Admittance

0

20

40

60

80

100

120

140

160

180

200

3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5

V

GE

- Volts

I

C

-

Amperes

T

J

= 125ºC

25ºC

- 40ºC

IXYL60N450

IXYL60N450

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