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NTD15N06LT4

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 3
1 Publication Order Number:
NTD15N06L/D
NTD15N06L
Power MOSFET
15 Amps, 60 Volts,
Logic Level
N−Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
• Pb−Free Packages are Available
Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage V
DSS
60 Vdc
Drain−to−Gate Voltage (R
GS
= 1.0 MW)
V
DGR
60 Vdc
Gate−to−Source Voltage
− Continuous
− Non−repetitive (t
p
v10 ms)
V
GS
V
GS
"15
"20
Vdc
Drain Current
− Continuous @ T
A
= 25°C
− Continuous @ T
A
= 100°C
− Single Pulse (t
p
v10 ms)
I
D
I
D
I
DM
15
10
45
Adc
Apk
Total Power Dissipation @ T
J
= 25°C
Derate above 25°C
Total Power Dissipation @ T
A
= 25°C (Note 1)
Total Power Dissipation @ T
A
= 25°C (Note 2)
P
D
48
0.32
2.1
1.5
W
W/°C
W
W
Operating and Storage Temperature Range T
J
, T
stg
−55 to
+175
°C
Single Pulse Drain−to−Source Avalanche Ener-
gy − Starting T
J
= 25°C
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc, L = 1.0 mH,
I
L(pk)
= 11 A, V
DS
= 60 Vdc)
E
AS
61
mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
R
q
JC
R
q
JA
R
q
JA
3.13
71.4
100
°C/W
Maximum Lead Temperature for Soldering Pur-
poses, 1/8″ from case for 10 seconds
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using the minimum recommended
pad size.
15 AMPERES
60 VOLTS
R
DS(on)
= 85 mW (TYP)
N−Channel
D
S
G
DPAK
CASE 369C
STYLE 2
MARKING
DIAGRAMS
1
2
3
4
DPAK−3
CASE 369D
STYLE 2
1
2
3
4
YWW
15
06LG
15 = Device Code
06L = Specific Device
Y = Year
W = Work Week
G Pb−Free Package
YWW
15
06LG
http://onsemi.com
Device Package Shipping
†
ORDERING INFORMATION
NTD15N06L DPAK 75 Units / Rail
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NTD15N06LG DPAK
(Pb−Free)
75 Units / Rail
NTD15N06L−1DPAK−3 75 Units / Rail
NTD15N06L−1G DPAK−3
(Pb−Free)
75 Units / Rail
NTD15N06LT4 DPAK 2500/Tape & Reel
NTD15N06LT4G DPAK
(Pb−Free)
2500/Tape & Reel
NTD15N06L
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)++
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(V
GS
= 0 Vdc, I
D
= 250 mAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
60
−
70
62.9
−
−
Vdc
mV/°C
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150°C)
I
DSS
−
−
−
−
1.0
10
mAdc
Gate−Body Leakage Current (V
GS
= ± 15 Vdc, V
DS
= 0 Vdc) I
GSS
− − ±100 nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(V
DS
= V
GS
, I
D
= 250 mAdc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
−
1.6
4.2
2.0
−
Vdc
mV/°C
Static Drain−to−Source On−Resistance (Note 3)
(V
GS
= 5.0 Vdc, I
D
= 7.5 Adc)
R
DS(on)
− 85 100
mW
Static Drain−to−Source On−Voltage (Note 3)
(V
GS
= 5.0 Vdc, I
D
= 15 Adc)
(V
GS
= 5.0 Vdc, I
D
= 7.5 Adc, T
J
= 125°C)
V
DS(on)
−
−
1.46
1.2
1.8
−
Vdc
Forward Transconductance (Note 3) (V
DS
= 8.0 Vdc, I
D
= 6.0 Adc) g
FS
− 9.1 − mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
− 310 440 pF
Output Capacitance C
oss
− 106 150
Transfer Capacitance C
rss
− 37 70
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
(V
DD
= 30 Vdc, I
D
= 15 Adc,
V
GS
= 5.0 Vdc, R
G
= 9.1 W) (Note 3)
t
d(on)
− 11 20 ns
Rise Time t
r
− 120 210
Turn−Off Delay Time t
d(off)
− 11 40
Fall Time t
f
− 42 80
Gate Charge
(V
DS
= 48 Vdc, I
D
= 15 Adc,
V
GS
= 5.0 Vdc) (Note 3)
Q
T
− 7.3 20 nC
Q
1
− 2.3 −
Q
2
− 4.4 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (I
S
= 15 Adc, V
GS
= 0 Vdc) (Note 3)
(I
S
= 15 Adc, V
GS
= 0 Vdc, T
J
= 150°C)
V
SD
−
−
0.96
0.83
1.2
−
Vdc
Reverse Recovery Time
(I
S
= 15 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms) (Note 3)
t
rr
− 35 −
ns
t
a
− 23 −
t
b
− 12 −
Reverse Recovery Stored Charge Q
RR
− 0.043 −
mC
3. Pulse Test: Pulse Width ≤300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTD15N06L
http://onsemi.com
3
0168
0.08
0
24
0.16
0.32
32
0.24
2
1.6
1.2
1.4
1
0.8
0.6
10
1
1000
10000
0842
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
0
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
0168
0.08
0
24
Figure 3. On−Resistance versus Drain Current
I
D
, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
32
−50 50250−25 75 125100
1327
0403020 6010
6
8
16
8 V
6 V
5 V
4 V
3.5 V
V
DS
≥ 10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 100°C
T
J
= 100°C
V
GS
= 5 V
V
GS
= 10 V
150 175
V
GS
= 0 V
I
D
= 7.5 A
V
GS
= 5 V
24
0.16
0.32
4.5 V
V
GS
= 10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 100°C
32
T
J
= 150°C
T
J
= 100°C
0
32
8
16
24
46
3 V
T
J
= 25°C
T
J
= −55°C
50
100
5
0.24
1.8
P1-P3P4-P6P7-P8

NTD15N06LT4

Mfr. #:
Buy NTD15N06LT4
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 60V 15A DPAK
Lifecycle:
New from this manufacturer.
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