OMO ElectronicOMO Electronic
Expand menu
0 Cart

2STP535FP

P1-P3P4-P6P7-P8
August 2009 Doc ID 16132 Rev 1 1/8
8
2STP535FP
NPN power Darlington transistor
Features
■ Monolithic Darlington transistor with integrated
antiparallel collector-emitter diode
■ Very high DC current gain
Applications
■ Electronic ignition
■ AC-DC motor control
■ Alternator regulator
Description
The 2STP535FP is a planar NPN power
transistor in monolithic Darlington configuration
mounted in TO-220FP fully isolated package.
Figure 1. Internal schematic diagram
1
2
3
TO-220FP
R typ. = 75 Ω
Table 1. Device summary
Order code Marking Package Packaging
2STP535FP 2STP535FP TO-220FP Tube
www.st.com
Electrical ratings 2STP535FP
2/8 Doc ID 16132 Rev 1
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
CBO
Collector-base voltage (I
E
= 0) 180 V
V
CEO
Collector-emitter voltage (I
B
= 0) 180 V
V
EBO
Emitter-base voltage (I
C
= 0) 5 V
I
C
Collector current 8 A
I
CM
Collector peak current (t
p
< 5 ms) 15 A
I
B
Base current 1 A
P
tot
Total dissipation at T
c
≤ 25 °C 37 W
T
stg
Storage temperature -65 to 150 °C
T
J
Max. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case max 3.4 °C/W
2STP535FP Electrical characteristics
Doc ID 16132 Rev 1 3/8
2 Electrical characteristics
(T
case
= 25 °C unless otherwise specified)
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CEO
Collector cut-off
current (I
B
= 0)
V
CE
= 180 V 50 µA
I
CBO
Collector-base cut-off
current (I
E
= 0)
V
CB
= 180 V 50 µA
I
EBO
Emitter-base cut-off
current (I
C
= 0)
V
EB
= 5 V 100 µA
V
CEO(sus)
(1)
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %.
Collector-emitter
sustaining voltage
(I
B
= 0)
I
C
= 30 mA 180 V
V
CE(sat)
(1)
Collector-emitter
saturation voltage
I
C
= 3 A I
B
= 6 mA
I
C
= 8 A I
B
= 80 mA
2
2.5
V
V
V
BE(on)
(1)
Base-emitter (on)
voltage
I
C
= 8 A V
CE
= 4 V 2.8 V
h
FE
(1)
DC current gain
I
C
= 3 A V
CE
= 4 V
I
C
= 8 A V
CE
= 4 V
1000
200
20000
V
F
(1)
Diode forward voltage I
F
= 10 A 2.8 V
P1-P3P4-P6P7-P8

2STP535FP

Mfr. #:
Buy 2STP535FP
Manufacturer:
STMicroelectronics
Description:
Bipolar Transistors - BJT PWR BIP/S.SIGNAL
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet