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NTR4502PT1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2003
October, 2016 − Rev. 6
1 Publication Order Number:
NTR4502P/D
NTR4502P, NVTR4502P
Power MOSFET
−30 V, −1.95 A, Single, P−Channel,
SOT−23
Features
• Leading Planar Technology for Low Gate Charge/Fast Switching
• Low R
DS(ON)
for Low Conduction Losses
• SOT−23 Surface Mount for Small Footprint (3 x 3 mm)
• NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Applications
• DC to DC Conversion
• Load/Power Switch for Portables and Computing
• Motherboard, Notebooks, Camcorders, Digital Camera’s, etc.
• Battery Charging Circuits
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter Symbol Value Unit
Drain−to−Source Voltage V
DSS
−30 V
Gate−to−Source Voltage V
GS
±20 V
Drain Current (Note 1) t < 10 s
T
A
= 25°C I
D
−1.95 A
T
A
= 70°C −1.56
Power Dissipation
(Note 1)
t < 10 s P
D
1.25 W
Continuous Drain Curren
t
(Note 1)
Steady
State
T
A
= 25°C I
D
−1.13 A
T
A
= 70°C −0.90
Power Dissipation
(Note 1)
Steady State P
D
0.4 W
Pulsed Drain Current
t
p
= 10 ms
I
DM
−6.8 A
Operating Junction and Storage Temperature T
J
,
T
STG
−55 to
150
°C
Source Current (Body Diode) I
S
−1.25 A
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)
T
L
260 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
R
q
JA
300
°C/W
Junction−to−Ambient – t = 10 s (Note 1)
R
q
JA
100
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces).
MARKING DIAGRAM
/
PIN ASSIGNMENT
S
G
D
P−Channel MOSFET
V
(BR)DSS
R
DS(on)
TYP I
D
Max (Note 1)
−30 V
155 mW @ −10 V
240 mW @ −4.5 V
−1.95 A
Device Package Shipping†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
NTR4502PT1G SOT−23
(Pb−Free)
3000 / Tape & Ree
l
NVTR4502PT1G 3000 / Tape & Ree
l
SOT−23
(Pb−Free)
SOT−23
CASE 318
STYLE 21
TR2 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
3
Drain
1
Gate
2
Source
TR2 M G
G
www.onsemi.com
NTR4502P, NVTR4502P
www.onsemi.com
2
Electrical Characteristics (T
J
= 25°C unless otherwise specified)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= −250 mA
−30 V
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V, V
DS
= −30 V
T
J
= 25°C −1 mA
T
J
= 55°C −10
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±20 V ±100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= −250 mA
−1.0 −3.0 V
Drain−to−Source On Resistance R
DS(on)
V
GS
= −10 V, I
D
= −1.95 A 155 200
mW
V
GS
= −4.5 V, I
D
= −1.5 A 240 350
Forward Transconductance g
FS
V
DS
= −10 V, I
D
=−1.25 A 3 S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1 MHz, V
DS
= −15 V
200
pF
Output Capacitance C
OSS
80
Reverse Transfer Capacitance C
RSS
50
Total Gate Charge Q
G(TOT)
V
GS
= −10 V, V
DS
= −15 V; I
D
= −1.95 A
6 10
nC
Threshold Gate Charge Q
G(TH)
0.3
Gate−to−Source Charge Q
GS
1
Gate−to−Drain Charge Q
GD
1.7
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
d(ON)
V
GS
=−10 V, V
DD
= −15 V,
I
D
= −1.95 A, R
G
= 6 W
5.2 10
ns
Rise Time t
r
12 20
Turn−Off Delay Time t
d(OFF)
19 35
Fall Time t
f
17.5 30
DRAIN−SOURCE DIODE CHARACTERISTICS (Note 3)
Forward Diode Voltage
V
SD
V
GS
= 0 V, I
S
= −1.25 A −0.8 −1.2 V
Reverse Recovery Time t
RR
V
GS
= 0 V, dI
SD
/d
t
= 100 A/ms, I
S
= −1.25 A
23 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Surface−mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces).
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTR4502P, NVTR4502P
www.onsemi.com
3
0
1
2
3
4
5
012345678910
Figure 1. On−Region Characteristics
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
−I
D
, DRAIN CURRENT (A)
V
GS
= −2.8 V
V
GS
= −2.6 V
V
GS
= −2.4 V
V
GS
= −3.0 V
V
GS
= −3.2 V
V
GS
= −3.4 V
V
GS
= −3.6 V
V
GS
= −3.8 V
T
J
= 25°C
V
GS
= −5.0 V
V
GS
= −7.0 V
V
GS
= −10 V
0
1
2
3
4
5
123456
7
Figure 2. Transfer Characteristics
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
−I
D
, DRAIN CURRENT (A)
V
DS
= −10 V
V
GS
= −4.0 V
T
J
= 25°C
T
J
= 100°C
T
J
= −55°C
0.1
0.15
0.2
0.25
0.3
0.35
0.4
345678910
I
D
= −1.95 A
T
J
= 25°C
Figure 3. On−Resistance versus
Gate−to−Source Voltage
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (
W
)
0.1
0.15
0.2
0.25
0.3
1 1.5 2 2.5 3 3.5 4 4.5
5
T
J
= 25°C
V
GS
= −4.5 V
V
GS
= −10 V
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
−I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.6
0.8
1
1.2
1.4
1.6
1.8
−50 −25 0 25 50 75 100 125 150
I
D
= −1.9 A
V
GS
= −10 V
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
1
10
100
1000
2 6 10 14 18 22 26 3
0
Figure 6. Drain−to−Source Leakage Current
versus Voltage
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
−I
DSS
, LEAKAGE (nA)
T
J
= 150°C
T
J
= 100°C
V
GS
= 0 V
P1-P3P4-P5

NTR4502PT1G

Mfr. #:
Buy NTR4502PT1G
Manufacturer:
ON Semiconductor
Description:
MOSFET -30V -1.95A P-Channel
Lifecycle:
New from this manufacturer.
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