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SST39VF1602C-70-4C-EKE

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P36P37-P39
©2011 Silicon Storage Technology, Inc. DS-25018A 05/11
16
16 Mbit Multi-Purpose Flash Plus
SST39VF1601C / SST39VF1602C
Data Sheet
A
Microchip Technology Company
Table 10:Device Geometry Information
Address Data Data
27H 0015H Device size = 2
N
Bytes (15H = 21; 2
21
= 2 MByte)
28H 0001H Flash Device Interface description; 0001H = x16-only asynchronous interface
29H 0000H
2AH 0000H Maximum number of byte in multi-byte write = 2
N
(00H = not supported)
2BH 0000H
2CH 0005H Number of Erase Sector/Block sizes supported by device
2DH 0000H Erase Block Region 1 Information (Refer to the CFI specification or CFI publication 100)
2EH 0000H
2FH 0040H
30H 0000H
31H 0001H Erase Block Region 2 Information
32H 0000H
33H 0020H
34H 0000H
35H 0000H Erase Block Region 3 Information
36H 0000H
37H 0080H
38H 0000H
39H 001EH Erase Block Region 4 Information
3AH 0000H
3BH 0000H
3CH 0001H
T10.0 25018
©2011 Silicon Storage Technology, Inc. DS-25018A 05/11
17
16 Mbit Multi-Purpose Flash Plus
SST39VF1601C / SST39VF1602C
Data Sheet
A
Microchip Technology Company
Electrical Specifications
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating con-
ditions may affect device reliability.)
Temperature Under Bias ............................................. -55°C to +125°C
Storage Temperature ................................................ -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential ............................-0.5V to V
DD
+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential ..................-2.0V to V
DD
+2.0V
Voltage on A
9
Pin to Ground Potential .....................................-0.5V to 13.2V
Package Power Dissipation Capability (T
A
= 25°C) .................................. 1.0W
Surface Mount Solder Reflow ......................................260°C for 10 seconds
Output Short Circuit Current
1
.................................................. 50mA
1. Outputs shorted for no more than one second. No more than one output shorted at a time.
Table 11:Operating Range
Range Ambient Temp V
DD
Commercial 0°C to +70°C 2.7-3.6V
Industrial -40°C to +85°C 2.7-3.6V
T11.1 25018
Table 12:AC Conditions of Test
1
1. See Figures 20 and 21
Input Rise/Fall Time Output Load
5ns C
L
=30pF
T12.1 25018
©2011 Silicon Storage Technology, Inc. DS-25018A 05/11
18
16 Mbit Multi-Purpose Flash Plus
SST39VF1601C / SST39VF1602C
Data Sheet
A
Microchip Technology Company
Power Up Specifications
All functionalities and DC specifications are specified for a V
DD
ramp rate of greater than 1V per 100
ms (0V to 3V in less than 300 ms). If the VDD ramp rate is slower than 1V per 100 ms, a hardware
reset is required. The recommended V
DD
power-up to RESET# high time should be greater than 100
µs to ensure a proper reset.
Figure 5: Power-Up Diagram
Table 13:DC Operating Characteristics V
DD
= 2.7-3.6V
1
1. Typical conditions for the Active Current shown on the front page of the data sheet are average values at 25°C
(room temperature), and V
DD
= 3V. Not 100% tested.
Symbol Parameter
Limits
Test ConditionsMin Max Units
I
DD
Power Supply Current Address input=V
ILT
/V
IHT
2
, at f=5 MHz,
V
DD
=V
DD
Max
2. See Figure 20
Read
3
3. The I
DD
current listed is typically less than 2mA/MHz, with OE# at V
IH.
Typical V
DD
is 3V.
18 mA CE#=V
IL
, OE#=WE#=V
IH
, all I/Os
open
Program and Erase 35 mA CE#=WE#=V
IL
, OE#=V
IH
I
SB
Standby V
DD
Current 20 µA CE#=V
IHC
,V
DD
=V
DD
Max
I
ALP
Auto Low Power 20 µA CE#=V
ILC
,V
DD
=V
DD
Max
All inputs=V
SS
or V
DD,
WE#=V
IHC
I
LI
Input Leakage Current 1 µA V
IN
=GND to V
DD
,V
DD
=V
DD
Max
I
LIW
Input Leakage Current
on WP# pin and RST#
10 µA WP#=GND to V
DD
or RST#=GND to
V
DD
I
LO
Output Leakage Current 10 µA V
OUT
=GND to V
DD
,V
DD
=V
DD
Max
V
IL
Input Low Voltage 0.8 V V
DD
=V
DD
Min
V
ILC
Input Low Voltage (CMOS) 0.3 V V
DD
=V
DD
Max
V
IH
Input High Voltage 0.7V
DD
VV
DD
=V
DD
Max
V
IHC
Input High Voltage (CMOS) V
DD
-0.3 V V
DD
=V
DD
Max
V
OL
Output Low Voltage 0.2 V I
OL
=100 µA, V
DD
=V
DD
Min
V
OH
Output High Voltage V
DD
-0.2 V I
OH
=-100 µA, V
DD
=V
DD
Min
T13.8 25018
1380 F24.0
V
DD
RESET#
CE#
T
PU-READ
10 0 µs
V
DD
min
0V
V
IH
T
RHR
50 ns
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P36P37-P39

SST39VF1602C-70-4C-EKE

Mfr. #:
Buy SST39VF1602C-70-4C-EKE
Manufacturer:
Microchip Technology
Description:
NOR Flash 16M (1Mx16) 70ns Commercial Temp
Lifecycle:
New from this manufacturer.
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