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ZXGD3006E6QTA

P1-P3P4-P6P7-P8
ZXGD3006E6
Document Number DS35229 Rev. 4 - 2
1 of 8
www.diodes.com
June 2013
© Diodes Incorporated
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Product Line o
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Diodes Incorporated
ZXGD3006E6
40V 10A GATE DRIVER IN SOT26
Description
ZXGD3006E6 is a 40V Gate Driver for switching IGBTs and SiC
MOSFETs. It can transfer up to 10A peak source/sink current into the
gate for effective charging and discharging of a large capacitive load.
The ZXGD3006E6 can drive typically 4A into the low gate impedance
of an IGBT, with just 1mA input from a controller. Also, the turn-on
and turn-off switching behavior of the IGBT can be individually tailored
to suit an application. In particular, by defining the switching
characteristics appropriately, EMI and cross conduction problems can
be reduced.
Applications
Gate driving IGBTs and SiC MOSFETs in:
DC-DC Converters in Electric Cars
Automotive Active Suspension Systems
Solar Inverters
Power Supplies
Plasma Display Panel Power Modules
Features
High-gain buffer with typically 4A output from 1mA input
40V supply for +20V to -18V gate driving to prevent dV/dt
induced false triggering
Emitter-follower that is rugged to latch-up / shoot-through
issues, and delivers <10ns propagation delay time
Separate source and sink outputs for independent control of
IGBT turn-on and turn-off times
Optimized pin-out to simplify PCB layout and reduce parasitic
trace inductances
Near-zero quiescent supply current
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP capable (Note 4)
Mechanical Data
Case: SOT26
Case material: molded plastic. “Green” molding compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.018 grams (approximate)
Ordering Information (Notes 4 & 5)
Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXGD3006E6TA AEC-Q101 3006 7 8 3,000
ZXGD3006E6QTA Automotive 3006 7 8 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green"
and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Pin Name Pin Function
V
CC
Supply Voltage High
IN Driver Input Pin
V
EE
Supply Voltage Low
SOURCE Source Current Output
SINK Sink Current Output
3006 = Product Type Marking Code
SOT26
Top View
Pin-Out
V
CC
IN
V
EE
Source
Do Not Connect
Sink
3006
Top View
Internal Device
Schematic
ZXGD3006E6
Document Number DS35229 Rev. 4 - 2
2 of 8
www.diodes.com
June 2013
© Diodes Incorporated
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Diodes Incorporated
ZXGD3006E6
Typical Application Circuit
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Supply voltage, with respect to V
EE
V
CC
40 V
Input voltage, with respect to V
EE
V
IN
40 V
Output difference voltage (Source – Sink)
V
(source-sink)
±7.5 V
Peak output current
I
PK
±10 A
Input current
I
IN
±100 mA
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Notes 6 & 7)
Linear derating factor
P
D
1.1
8.8
W
mW/°C
Thermal Resistance, Junction to Ambient (Notes 6 & 7)
R
JA
113
°C/W
Thermal Resistance, Junction to Lead (Note 8)
R
JL
105
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
ESD Ratings (Note 9)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 1,500 V 1C
Electrostatic Discharge – Charged Device Model ESD CDM 1,000 V IV
Notes: 6. For a device mounted on 25mm x 25mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst
operating in a steady-state. The heatsink is split in half with the pin 1 (V
CC
) and pin 3 (V
EE
) connected separately to each half.
7. For device with two active die running at equal power.
8. Thermal resistance from junction to solder-point at the end of each lead on pin 1 (V
CC
) and pin 3 (V
EE
).
9. Refer to JEDEC specification JESD22-A114 and JESD22-C101.
IN
V
CC
+ supply
ZXGD3006
V
S
V
CC
SOURCE
SINK
R
SOURCE
R
SINK
Controller
V
EE
IGBT
(or SiC MOSFET)
V
EE
- supply
ZXGD3006E6
Document Number DS35229 Rev. 4 - 2
3 of 8
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June 2013
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ZXGD3006E6
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Output voltage, high
V
OUT(hi)
V
CC
- 1.0 V
CC
- 0.8
—
V
V
IN
= V
CC
C
L
= 1nF
R
SOURCE
= 0, R
SINK
= 0
Output voltage, low
V
OUT(low)
—
V
EE
+ 0.12 V
EE
+ 0.3 V
IN
= V
EE
Supply breakdown voltage
BV
CC
40 — —
V
I
Q
= 100A, V
IN
= V
CC
40 — —
I
Q
= 100A, V
IN
= V
EE
= 0V
Quiescent supply current
I
Q
— — 50
nA
V
CC
= 30V, V
IN
= V
CC
— — 50
V
CC
= 30V, V
IN
= V
EE
= 0V
Source current
I
(source)
— 4.0 —
A
V
CC
= 5V, I
IN
= 1mA, V
OUT
= 0V
Sink current
I
(sink)
— 3.8 —
V
CC
= 5V, I
IN
=-1mA, V
OUT
= 5V
Source current
with varying input resistances
I
(source)
—
6.4
5.5
3.9
2.2
0.44
— A
R
IN
= 200
R
IN
= 1k
R
IN
= 10k
R
IN
= 100k
R
IN
= 1000k
V
CC
= 15V, V
EE
= 0V
V
IN
= 15V
C
L
= 100nF, R
L
= 0.18
R
SOURCE
= 0, R
SINK
= 0
Sink current
with varying input resistances
I
(sink)
—
7.7
6.5
4.4
2.3
0.46
— A
R
IN
= 200
R
IN
= 1k
R
IN
= 10k
R
IN
= 100k
R
IN
= 1000k
V
CC
= 15V, V
EE
= 0V
V
IN
= 15V
C
L
= 100nF, R
L
= 0.18
R
SOURCE
= 0, R
SINK
= 0
Switching times
with low load capacitance
C
L
= 10nF
t
d(rise)
t
r
t
d(fall)
t
f
—
8
48
16
35
— ns
V
CC
= 15V, V
EE
= 0V
V
IN
= 0 to 15V
R
IN
= 1k
C
L
= 10nF, R
L
= 0.18
R
SOURCE
= 0 , R
SINK
= 0
Switching times
with high load capacitance C
L
= 100nF
t
d(rise)
t
r
t
d(fall)
t
f
—
46
419
47
467
— ns
V
CC
= 15V, V
EE
= 0V
V
IN
= 0 to15V
R
IN
= 1k
C
L
= 100nF, R
L
= 0.18
R
SOURCE
= 0, R
SINK
= 0
Switching times
with asymmetric source and sink resistors
t
d(rise)
t
r
t
d(fall)
t
f
—
27
208
11
53
— ns
V
CC
= 20V, V
EE
= -18V
V
IN
= -18 to 20V
R
IN
= 1k
C
L
= 10nF, R
L
= 0.18
R
SOURCE
= 4.7, R
SINK
= 0
Switching Test Circuit and Timing Diagram
10%
90%
90%
t
r
t
d(rise)
t
d(fall)
t
f
V
IN
V
OUT
V
CC
V
EE
V
CC
IN
ZXGD3006
SOURCE
SINK
R
SOURCE
R
SINK
R
IN
50
50
R
L
C
L
V
IN
V
OUT
10%
90%
10%
V
P1-P3P4-P6P7-P8

ZXGD3006E6QTA

Mfr. #:
Buy ZXGD3006E6QTA
Manufacturer:
Diodes Incorporated
Description:
Gate Drivers 10A Gate Driver 40V 9.5ns
Lifecycle:
New from this manufacturer.
Delivery:
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