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MDD312-20N1

P1-P3P4-P6
MDD312-20N1
Phase leg
High Voltage Standard Rectifier Module
2 1 3
Part number
MDD312-20N1
Backside: isolated
FAV
F
V V1.03
RRM
310
2000
=
V
=
V
I
=
A
2x
Features / Advantages: Applications: Package:
● Package with DCB ceramic
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
● Diode for main rectification
● For single and three phase
bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
Y1
● Industry standard outline
● RoHS compliant
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
● Isolation Voltage: V~
3600
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
Terms Conditions of usage:
IXYS reserves the right to change limits, conditions and dimensions.
20170116iData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
MDD312-20N1
V = V
kA²s
kA²s
kA²s
kA²s
Symbol
Definition
Ratings
typ.
max.
I
R
V
I
A
V
F
1.13
R
0.12 K/W
R
min.
310
V
RSM
V
500T = 25°C
VJ
T = °C
VJ
mA30V = V
R
T = 25°C
VJ
I = A
V
T = °C
C
100
P
tot
1040 WT = 25°C
C
R
K/W
300
2000
max. non-repetitive reverse blocking voltage
reverse current
forward voltage drop
total power dissipation
Conditions
Unit
1.33
T = 25°C
VJ
150
V
F0
V0.80T = °C
VJ
150
r
F
0.6
mΩ
V1.03T = °C
VJ
I = A
V
300
1.29
I = A
600
I = A
600
threshold voltage
slope resistance
for power loss calculation only
µA
125
V
RRM
V2000
max. repetitive reverse blocking voltage
T = 25°C
VJ
I
A520
C
J
288
junction capacitance
V = V;700 T = 25°Cf = 1 MHz
R
VJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t
T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
150
10.8
11.7
421.4
409.0
kA
kA
kA
kA
9.18
9.92
583.2
566.1
2000
RMS forward current
F(RMS)
FAV
d =180° sine 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
2100
0.04
IXYS reserves the right to change limits, conditions and dimensions.
20170116iData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
MDD312-20N1
Ratings
Part Number
yywwAA
Date Code
(DC)
Production
Index (PI)
Lot.No: xxxxxx
Data Matrix: part no. (1-19), DC + PI (20-25), lot.no.#
(26-31),
blank (32), serial no.# (33-36)
Circuit
MDD312-14N1 Y1-CU 1400
Package
T
op
°C
M
D
Nm7
mounting torque
4.5
T
VJ
°C150
virtual junction temperature
-40
Weight
g680
Symbol
Definition
typ.
max.
min.
Conditions
operation temperature
Unit
M
T
Nm13
terminal torque
11
V
V
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
16.0
16.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
600 A
per terminal
125-40
terminal to terminal
MDD312-16N1
MDD312-18N1
Y1-CU
Y1-CU
1600
1800
MDD312-22N1 Y1-CU 2200
Y1
Similar Part Package Voltage class
MDD312-12N1 Y1-CU 1200
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
MDD312-20N1 467251Box 3MDD312-20N1Standard
3600
ISOL
T
stg
°C125
storage temperature
-40
3000
threshold voltage
V0.8
mΩ
V
0 max
R
0 max
slope resistance *
0.4
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Rectifier
150 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions.
20170116iData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
P1-P3P4-P6

MDD312-20N1

Mfr. #:
Buy MDD312-20N1
Manufacturer:
Littelfuse
Description:
Discrete Semiconductor Modules 312 Amps 2000V
Lifecycle:
New from this manufacturer.
Delivery:
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