ZXMN6A08G
Document Number DS33550 Rev. 2 - 2
2 of 7
www.diodes.com
March 2015
© Diodes Incorporated
ADVANCE INFO R MA T I O N
NEW PRODUCT
Absolute Maximum Ratings
Characteristic Symbol Value Unit
Drain-Source Voltage
V
DSS
60 V
Gate-Source Voltage
V
GSS
±20
V
Continuous Drain Current V
GS
= 10V
T
A
= +25°C (Note 6)
I
D
5.3 A
T
A
= +70°C (Note 6)
4.2 A
T
A
= +25°C (Note 5)
3.8 A
Pulsed Drain Current (Note 7)
I
DM
20 A
Continuous Source Current (body diode)( Note 6)
I
S
2.1
A
Pulsed Source Current (body diode)( Note 7)
I
SM
20
A
Power Dissipation at T
A
= +25°C (Note 5)
Linear Derating Factor
P
D
2
16
W
mW/°C
Power Dissipation at T
A
= +25°C (Note 6)
Linear Derating Factor
P
D
3.9
31
W
mW/°C
Linear Derating Factor
T
J
, T
STG
-55 to +150 °C
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Junction to Ambient (Note 5)
R
62.5 °C/W
Junction to Ambient (Note 6)
R
32 °C/W
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
60
−
V
V
= 0V, I
=250µA
Zero Gate Voltage Drain Current
I
0.5 µA
V
= 60V, V
= 0V
Gate-Source Leakage
I
100 nA
V
= ±20V, V
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
1
−
- V
V
= V
, I
= 250µA
Static Drain-Source On-State Resistance (Note 8)
R
DS (ON)
− −
0.08 Ω
V
= 10V, I
= 4.8A
− −
0.15 Ω
V
= 4.5V, I
= 4.2A
Forward Transconductance (Notes 8 &10)
g
6.6
−
S
V
=15V,I
=4.8A
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
C
459
pF
V
DS
= 40V, V
GS
= 0V,
f = 1MHz
Output Capacitance
C
44.2
pF
Reverse Transfer Capacitance
C
24.1
pF
Turn-On Delay Time (Note 9)
t
2.6
ns
V
DD
= 30V, I
D
=1.5A
RG 6.0Ω, V
GS
= 10V
Turn-On Rise Time (Note 9)
t
2.1
ns
Turn-Off Delay Time (Note 9)
t
12.3
ns
Turn-Off Fall Time (Note 9)
t
4.6
ns
Gate Charge (Note 9) Qg
−
4.0
−
nC
V
DS
= 30V, V
GS
= 5V
I
= 1.4A
Total Gate Charge (Note 9) Qg
5.8
nC
V
DS
= 30V, V
GS
= 10V
I
D
= 1.4A
Gate-Source Charge (Note 9) Qgs
1.4
nC
Gate Drain Charge (Note 9) Qgd
1.9
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (Note 8)
V
SD
−
0.88 1.2 V
Tj=+25°C, I
S
= 4A,
V
=0V
Reverse Recovery Time (Note 10) trr
19.2
ns
Tj=+25°C, I
S
= 1.4A,
di/dt=100A/µs
Reverse Recovery Charge (Note 10) Qrr
30.3
nC
Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. For a device surface mounted on FR4 PCB measured at t <= 10 sec.
7. Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300_s - pulse width limited by maximum junction temperature.
8.
Measured under pulsed conditions. Pulse width <= 300_s; duty cycle <=2%.
9.
Switching characteristics are independent of operating junction temperature.
10. For design aid only, not subject to production testing.
