www.vishay.com Document Number: 91260
6 S11-0111-Rev. C, 07-Feb-11
IRFPS40N50L, SiHFPS40N50L
Vishay Siliconix
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 12d - Maximum Safe Operating Area
Fig. 13a - Gate Charge Test Circuit
Fig. 13b - Basic Gate Charge Waveform
A
R
G
I
AS
0.01 Ω
t
p
D.U.T.
L
V
DS
+
-
V
DD
Driver
15 V
20 V
1
10
100
1000
10 100 100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
25 50 75 100 125 150
0
500
1000
1500
2000
Starting T , Junction Temperature( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
I
D
TOP
BOTTOM
21A
30A
46A
D.U.T.
3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
Q
GS
Q
GD
Q
G
V
G
Charge
V
GS