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TSHG8400

P1-P3P4-P5
TSHG8400
www.vishay.com
Vishay Semiconductors
Rev. 1.4, 03-Sep-13
1
Document Number: 81297
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Speed Infrared Emitting Diode, 830 nm,
GaAlAs Double Hetero
DESCRIPTION
TSHG8400 is an infrared, 830 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Peak wavelength: λ
p
= 830 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 22°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: f
c
= 18 MHz
• Good spectral matching with CMOS cameras
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Infrared radiation source for operation with CMOS
cameras (illumination)
• High speed IR data transmission
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
94 8389
PRODUCT SUMMARY
COMPONENT I
e
(mW/sr) ϕ (deg) λ
p
(nm) t
r
(ns)
TSHG8400 70 ± 22 830 20
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
TSHG8400 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
5V
Forward current I
F
100 mA
Peak forward current t
p
/T = 0.5, t
p
= 100 μs I
FM
200 mA
Surge forward current t
p
= 100 μs I
FSM
1A
Power dissipation P
V
180 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
- 40 to + 85 °C
Storage temperature range T
stg
- 40 to + 100 °C
Soldering temperature t ≤ 5 s, 2 mm from case T
sd
260 °C
Thermal resistance junction/ambient
J-STD-051,
leads 7 mm soldered on PCB
R
thJA
230 K/W
TSHG8400
www.vishay.com
Vishay Semiconductors
Rev. 1.4, 03-Sep-13
2
Document Number: 81297
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
200
0 102030405060708090100
21142
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
R
thJA
= 230 K/W
0
20
40
60
80
100
120
0 102030405060708090100
T
amb
- Ambient Temperature (°C)
21143
I
F
- Forward Current (mA)
R
thJA
= 230 K/W
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 100 mA, t
p
= 20 ms V
F
1.5 1.8 V
I
F
= 1 A, t
p
= 100 μs V
F
2.3 V
Temperature coefficient of V
F
I
F
= 1 mA TK
VF
- 1.8 mV/K
Reverse current V
R
= 5 V I
R
10 μA
Junction capacitance V
R
= 0 V, f = 1 MHz, E = 0 C
j
125 pF
Radiant intensity
I
F
= 100 mA, t
p
= 20 ms I
e
45 70 135 mW/sr
I
F
= 1 A, t
p
= 100 μs I
e
700 mW/sr
Radiant power I
F
= 100 mA, t
p
= 20 ms φ
e
50 mW
Temperature coefficient of φ
e
I
F
= 100 mA TKφ
e
- 0.35 %/K
Angle of half intensity ϕ ± 22 deg
Peak wavelength I
F
= 100 mA λ
p
830 nm
Spectral bandwidth I
F
= 100 mA Δλ 40 nm
Temperature coefficient of λ
p
I
F
= 100 mA TKλ
p
0.25 nm/K
Rise time I
F
= 100 mA t
r
20 ns
Fall time I
F
= 100 mA t
f
13 ns
Cut-off frequency I
DC
= 70 mA, I
AC
= 30 mA pp f
c
18 MHz
Virtual source diameter d 3.7 mm
TSHG8400
www.vishay.com
Vishay Semiconductors
Rev. 1.4, 03-Sep-13
3
Document Number: 81297
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 6 - Radiant Power vs. Forward Current
Fig. 7 - Relative Radiant Power vs. Wavelength
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
100
1000
0.01 0.1 1 10 100
t
p
- Pulse Duration (ms)
16031
t
p
/T = 0.01
0.05
0.2
0.5
0.1
0.02
T
amb
< 50 °C
I
F
- Forward Current (mA)
18873
I
F
- Forward Current (mA)
1000
100
10
1
V
F
- Forward Voltage (V)
024
t
p
= 100 µs
t
p
/T = 0.001
13
0.1
1
10
100
1000
1 10 100 1000
18220
I
F
- Forward Current (mA)
I
e
- Radiant Intensity (mW/sr)
0.1
1
10
100
1000
11 0 100 1000
16971
I
F
- Forward Current (mA)
- Radiant Power (mW)
e
740 800
λ- Wavelength (nm)
900
16972_1
0
0.25
0.5
0.75
1.0
1.25
Φ
e, rel
- Relative Radiant Power
94 8883
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
0
0.2
0.4
I
e rel
- Relative Radiant Intensity
ϕ - Angular Displacement
P1-P3P4-P5

TSHG8400

Mfr. #:
Buy TSHG8400
Manufacturer:
Vishay Semiconductors
Description:
Infrared Emitters High Speed Emitter 5V 50mW 830nm 22 Deg
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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