Characteristics LFTVS10-1F3
2/7
1 Characteristics
Table 1. Absolute maximum ratings (T
amb
= 25 °C)
Symbol Parameter Test condition Value Unit
P
PP
Peak pulse power dissipation
(10/1000 µs pulse)
T
j
initial = T
amb
44
W
Peak pulse power dissipation
(8/20 µs pulse)
350
I
FSM
Non repetitive surge peak forward
current
t
p
= 10 ms
T
j
initial = T
amb
11 A
T
stg
Storage temperature range -55 to +150 °C
T
j
Maximum operating junction temperature 125 °C
Table 2. Electrical characteristics (T
amb
= 25 °C)
Symbol Parameter
V
BR
Breakdown voltage
I
RM
Leakage current @ V
RM
V
RM
Stand-off voltage
V
CL
Clamping voltage
R
d
Dynamic impedance
I
PP
Peak pulse current
αT Voltage temperature coefficient
V
F
Forward voltage drop
Symbol Test conditions Min. Typ. Max. Unit
V
BR
I
R
= 15 mA 10 V
I
RM
V
RM
= 8 V 0.5 µA
V
CL
I
PP
= 1 A
(1)
1. 8 / 20 µs pulse waveform
13 V
V
F
I
F
= 850 mA
(2)
2. DC current not recommended for more than 5 s. Even if diode failure mode is short circuit the bumps could
exceed melting temperature and the component disassembled from the board.
1.05 V
αT 810
-4
/ °C
C
line
V
R
= 0 V, V
OSC
= 30 mV, F = 1 MHz 200 pF
I
V
I
F
I
RM
I
PP
V
RM
V
F
V
BR
Slope = 1/Rd
V
CL
