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HFA06TB120S

P1-P3P4-P6P7-P7
Document Number: 93036 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 22-Oct-08 1
HEXFRED
®
Ultrafast Soft Recovery Diode, 6 A
HFA06TB120S
Vishay High Power Products
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
• Very low I
RRM
• Very low Q
rr
• Specified at operating conditions
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
HFA06TB120S is a state of the art ultrafast recovery diode.
Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of
characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic
ratings of 1200 V and 6 A continuous current, the
HFA06TB120S is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
®
product line features
extremely low values of peak recovery current (I
RRM
) and
does not exhibit any tendency to “snap-off” during the
t
b
portion of recovery. The HEXFRED features combine to
offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA06TB120S is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
PRODUCT SUMMARY
V
R
1200 V
V
F
at 6 A at 25 °C 3.0 V
I
F(AV)
6 A
t
rr
(typical) 26 ns
T
J
(maximum) 150 °C
Q
rr
(typical) 116 nC
dI
(rec)M
/dt (typical) at 125 °C 100 A/µs
I
RRM
(typical) 4.4 A
1
+
3
2
Base
cathode
N/C
Anode
_
D
2
PAK
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
R
1200 V
Maximum continuous forward current I
F
T
C
= 100 °C 6
ASingle pulse forward current I
FSM
80
Maximum repetitive forward current I
FRM
24
Maximum power dissipation P
D
T
C
= 25 °C 62.5
W
T
C
= 100 °C 25
Operating junction and storage temperature range T
J
, T
Stg
- 55 to + 150 °C
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 93036
2 Revision: 22-Oct-08
HFA06TB120S
Vishay High Power Products
HEXFRED
®
Ultrafast Soft Recovery Diode, 6 A
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
V
BR
I
R
= 100 µA 1200 - -
V
Maximum forward voltage V
FM
I
F
= 6.0 A - 2.7 3.0
I
F
= 12 A - 3.5 3.9
I
F
= 6.0 A, T
J
= 125 °C - 2.4 2.8
Maximum reverse
leakage current
I
RM
V
R
= V
R
rated - 0.26 5.0
µA
T
J
= 125 °C, V
R
= 0.8 x V
R
rated - 110 500
Junction capacitance C
T
V
R
= 200 V - 9.0 14 pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8.0 - nH
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time
t
rr
I
F
= 1.0 A, dI
F
/dt = 200 A/µs, V
R
= 30 V - 26 -
nst
rr1
T
J
= 25 °C
I
F
= 6.0 A
dI
F
/dt = 200 A/µs
V
R
= 200 V
-5380
t
rr2
T
J
= 125 °C - 87 130
Peak recovery current
I
RRM1
T
J
= 25 °C - 4.4 8.0
A
I
RRM2
T
J
= 125 °C - 5.0 9.0
Reverse recovery charge
Q
rr1
T
J
= 25 °C - 116 320
nC
Q
rr2
T
J
= 125 °C - 233 585
Peak rate of recovery current
during t
b
dI
(rec)M
/dt1 T
J
= 25 °C - 180 -
A/µs
dI
(rec)M
/dt2 T
J
= 125 °C - 100 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
lead
0.063" from case (1.6 mm) for 10 s - - 300 °C
Thermal resistance,
junction to case
R
thJC
--2.0
K/W
Thermal resistance,
junction to ambient
R
thJA
Typical socket mount - - 80
Thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth and greased - 0.5 -
Weight
-2.0- g
-0.07- oz.
Document Number: 93036 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 22-Oct-08 3
HFA06TB120S
HEXFRED
®
Ultrafast Soft Recovery Diode, 6 A
Vishay High Power Products
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
1
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0 62
3
V
F
- Forward Voltage Drop (V)
I
F
- Instantaneous
Forward Current (A)
100
14
0.1
5
0.01
0.1
1
10
100
0 200 600
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (µA)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
1000
800 14001200
400 1000
T
J
= 100 °C
10
100
1 10 100 1000
1
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
10 000
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1
1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Response
Single pulse
(thermal resistance)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
10
10
100
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
P1-P3P4-P6P7-P7

HFA06TB120S

Mfr. #:
Buy HFA06TB120S
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers RECOMMENDED ALT 78-VS-HFA06TB120S-M3
Lifecycle:
New from this manufacturer.
Delivery:
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