FIGURE 1
DESIGN DATA
CASE: DO-213AA, Hermetically sealed
glass case. (MELF, SOD-80, LL34)
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (R
OJEC
):
100 °C/W maximum
THERMAL IMPEDANCE: (Z
OJX
): 70
°C/W maximum
POLARITY: Cathode end is banded.
MOUNTING POSITION: Any.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
D 1.60 1.70 0.063 0.067
F 0.41 0.55 0.016 0.022
G 3.30 3.70 .130 .146
G1 2.54 REF. .100 REF.
S 0.03 MIN. .001 MIN.
137
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600 FAX (781) 689-0803
WEBSITE: http://www.microsemi.com
• AVAILABLE IN JAN, JANTX AND JANTXV
PER MIL-PRF-19500/118
• GENERAL PURPOSE SILICON DIODES
• METALLURGICALLY BONDED
1N5194UR
1N5195UR
1N5196UR
CDLL5194
CDLL5195
CDLL5196
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 200 mA
Derating: 1.2mA/°C from 25ºC to 150ºC
1.0mA/°C from 150ºC to 175ºC
Forward Current: 650mA
V
RM
V
RWM
I
O
I
O
I
FSM
TYPE T
A
= +150
°C T
P
=1/120 S
T
A
=25ºC
V
(pk)
V
(pk)
mA mA A
CDLL, 1N5194UR 80 70 200 50 2
CDLL, 1N5195UR 180 180 200 50 2
CDLL, 1N5196UR 250 225 200 50 2
V
F
I
R1
at V
RWM
I
R2
at V
RM
I
R3
at V
RWM
TYPE @100mA T
A
=25ºC T
A
= 150
°C
V dc nA dc
µ
A
µ
A dc
CDLL, 1N5194UR 0.8 - 1.0 25 100 5
CDLL, 1N5195UR 0.8 - 1.0 25 100 5
CDLL, 1N5196UR 0.8 - 1.0 25 100 5
