2004 Dec 06 3
NXP Semiconductors Product data sheet
NPN Darlington transistors BCV29; BCV49
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
For
other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
For
other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BCV29 − 40 V
BCV49 − 80 V
V
CES
collector-emitter voltage V
BE
= 0 V
BCV29 − 30 V
BCV49 − 60 V
V
EBO
emitter-base voltage open collector − 10 V
I
C
collector current (DC) − 500 mA
I
CM
peak collector current − 1 A
I
BM
peak base current − 200 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 1.3 W
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 96 K/W
R
th(j-s)
thermal resistance from junction to soldering point 16 K/W
