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EAPDSZ4439A4
P1-P3
P4-P6
P7-P8
1
Copyright © 2013, Ev
erlight All Rights Reserv
ed. Release
Date :
3/27/
201
4.
Issue No:DPD-
0000158.
Rev:4
ww
w.ev
erlight.com
Silicon Planar PIN Photodiode
EAPDSZ
4439A4
Features
․
High sensitivity
․
L
ow capacitance
․
Short switching time
․
Wide temperature rang
e
․
Small package
․
Pb free
․
The product itself will remain within RoHS compliant version.
Descriptions
‧
EAPDSZ4439A4 is high sensitivity
, fast switching
times, low capacitance, c
ompact size,
and lack of measura
ble degrada
tion make it suitable for diverse applica
tions, such as TV and
appliance remote
control, IR sound tra
nsmission, video recorders, and measurement and
control.
Applications
․
High speed photo dete
ctor
․
Copier
․
Elevator
Device Selection Guide
Part Category
Chip
Material
Lens Color
EAPDSZ4439A4
Silicon
Water clear
Data Sheet
Silicon Planar PIN Photodiode
EA
PDS
Z4439A
4
2
Copyright © 2013, Ev
erlight All Rights Reserv
ed. Release
Date :
3/27/
201
4.
Issue No:DPD-
0000158.
Rev:4
ww
w.ev
erlight.com
Pack
age Dimensions
Notes:
1.All dimensions are in millimeters
2.Tolerances unless dimensions
±
0.1mm
Absolute Maximum R
atings (Ta=2
5
℃
)
Param
eter
Symbol
Rating
Units
Reverse Voltag
e
V
R
32
V
Operating Te
mperature
T
opr
-25 ~ +85
℃
Storage Te
mperature
T
stg
-40 ~ +85
℃
Soldering Tempera
ture
*1
T
sol
260
℃
Power Dissipation at(or below)
25
℃
Free Air T
emperature
P
d
150
mW
Notes:
*1:Soldering time
≦
5 sec
onds.
Data Sheet
Silicon Planar PIN Photodiode
EA
PDS
Z4439A
4
3
Copyright © 2013, Ev
erlight All Rights Reserv
ed. Release
Date :
3/27/
201
4.
Issue No:DPD-
0000158.
Rev:4
ww
w.ev
erlight.com
Electro-Optical
Characteristi
cs (Ta=25
℃
)
Param
eter
Symbol
Condition
Min
Typ
Max
Unit
Rang Of Spec
tral Bandwidth
λ
0.5
---
400
---
1100
nm
Wavelength Of Pea
k Sensitivity
λ
P
---
---
940
---
nm
Short- Circuit Current
I
SC
Ee=1mW/cm
2
λ
p=875nm
---
35
---
μ
A
Reverse L
ight Current
I
L
Ee=1mW/cm
2
λ
p=875nm
V
R
=5V
17
25
---
μ
A
Reverse Dark Cur
rent
I
D
Ee=0mW/cm
2
V
R
=10V
---
5
30
nA
Reverse Bre
akdown Voltage
V
BR
Ee=0mW/cm
2
I
R
=100
μ
A
32
170
---
V
Temperature c
oefficient of V
oc
TK
Vo
c
Ee=1mW/cm
2
λ
p=940nm
---
-2.6
---
mV/K
Temperature c
oefficient of I
sc
TK
I
sc
Ee=1mW/cm
2
λ
p=940nm
---
-0.1
---
%/K
P1-P3
P4-P6
P7-P8
EAPDSZ4439A4
Mfr. #:
Buy EAPDSZ4439A4
Manufacturer:
Everlight
Description:
Photodiodes Detector Subminiature (T 3/4)
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
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Union
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EAPDSZ4439A4