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NCP1411DMR2G

P1-P3P4-P6P7-P9P10-P12P13-P14
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 4
1 Publication Order Number:
NCP1411/D
NCP1411
Sync−Rect PFM Step−Up
DC−DC Converter with
Low−Battery Detector and
Ring−Killer
NCP1411 is a monolithic micropower high frequency Boost
(step−up) voltage switching converter IC specially designed for
battery operated hand−held electronic products up to 250 mA loading.
It integrates Synchronous Rectifier for improving efficiency as well as
eliminating the external Schottky Diode. High switching frequency
(up to 600 kHz) allows low profile inductor and output capacitor being
used. Low−Battery Detector, Logic−Controlled Shutdown and
Cycle−by−Cycle Current Limit provide value−added features for
various battery−operated applications. The innovative Ring−Killer
circuitry guarantees quiet operation in discontinuous conduction
mode. With all these functions ON, the device quiescent supply
current is only 9.0 mA typical. This device is available in the space
saving compact Micro8t package.
Features
• Pb−Free Package is Available
• High Efficiency, up to 92%
• Very Low Device Quiescent Supply Current of 9.0 mA Typical
• Built−in Synchronous Rectifier (P−FET) Eliminates One External
Schottky Diode
• High Switching Frequency (up to 600 kHz) Allows use of Small Size
Inductor
• High Accuracy Reference Output, 1.19 V $0.6% @ 25°C, can
supply more than 2.5 mA when V
OUT
≥ 3.3 V
• Ring−Killer for Quiet Operation in Discontinuous Conduction Mode
• 1.0 V Startup at No Load Guaranteed
• Output Voltage from 1.5 V to 5.5 V Adjustable
• Output Current up to 250 mA @ V
IN
= 2.5 V, V
OUT
= 3.3 V
• Logic−Controlled Shutdown
• Open Drain Low−Battery Detector Output
• 1.0 A Cycle by Cycle Current Limit
• Low Profile and Minimum External Parts
• Compact Micro8 Package
Typical Applications
• Personal Digital Assistant (PDA)
• Handheld Digital Audio Product
• Camcorder and Digital Still Camera
• Handheld Instrument
• Conversion from One or Two NiMH or NiCd, or One Li−ion Cell
to 3.3 V/5.0 V
Micro8
DM SUFFIX
CASE 846A
1
8
PIN CONNECTIONS
A2 = Device Marking
A = Assembly Location
Y = Year
W = Work Week
(Top View)
MARKING
DIAGRAM
A2
AYW
1
FB
8
OUT
2
LBI/EN
3
LBO
4
REF
7
LX
6
GND
5
BAT
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Device Package Shipping†
ORDERING INFORMATION
NCP1411DMR2 Micro8 4000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
NCP1411DMR2G Micro8
(Pb−Free)
4000 Tape & Reel
NCP1411
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2
Figure 1. Typical Operating Circuit
FB
LBI/EN
LBO
REF
OUT
LX
GND
BAT
4
3
2
1
5
6
7
8
150 nF
33 mF
NCP1411
+
350 k
10 mF
22 mH
220 pF
150 pF
200 k
C
EN
120 nF
Output 1.5 to 5.5 V
I
OUT
Typical
Up to 250 mA at
3.3 V Output
and 2.5 V Input
Input
1 V to
V
OUT
Low Battery
Sense Input
Shutdown
Open Drain
Input
Low Battery
Open Drain
Output
R
LB1
R
LB2
PIN FUNCTION DESCRIPTION
Pin # Symbol Pin Description
1 FB Output Voltage Feedback Input.
2 LBI/EN Low−Battery Detector Input and IC Enable.
3 LBO Open−Drain Low−Battery Detector Output. Output is LOW when V
LBI
is < 1.178 V. LBO is high impedance during
shutdown.
4 REF
1.190 V Reference Voltage Output, bypassing with 150 nF capacitor if this pin is not loaded, bypassing with 1.0 mF
if this pin is loaded up to 2.5 mA @ V
OUT
= 3.3 V.
5 BAT Battery input connection for internal Ring−Killer.
6 GND Ground.
7 LX N−Channel and P−Channel Power MOSFET Drain Connection.
8 OUT Power Output. OUT also provides bootstrapped power to the device.
MAXIMUM RATINGS
Rating Symbol Value Unit
Device Power Supply (Pin 8) V
OUT
−0.3 to 6.0 V
Input/Output Pins (Pins 1−5, Pin 7) V
IO
−0.3 to 6.0 V
Thermal Characteristics − Micro8 Plastic Package
Maximum Power Dissipation @ T
A
= 25°C
Thermal Resistance, Junction−to−Air
P
D
R
q
JA
520
240
mW
°C/W
Operating Junction Temperature Range T
J
−40 to +150 °C
Operating Ambient Temperature Range T
A
−40 to +85 °C
Storage Temperature Range T
stg
−55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device contains ESD protection and exceeds the following tests:
Human Body Model (HBM) "2.0 kV per JEDEC standard: JESD22−A114.
Machine Model (MM) "200 V per JEDEC standard: JESD22−A115.
2. The maximum package power dissipation limit must not be exceeded.
P
D
+
T
J(max)
* T
A
R
qJA
3. Latchup Current Maximum Rating: "150 mA per JEDEC standard: JESD78.
4. Moisture Sensitivity Level: MSL 1 per IPC/JEDEC standard: J−STD−020A.
NCP1411
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3
ELECTRICAL CHARACTERISTICS (V
OUT
= 3.3 V, T
A
= 25°C for typical value, −40°C ≤ T
A
≤ 85°C for min/max values
unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
Operating Input Voltage V
IN
1.0 − 5.5 V
Output Voltage Range (Adjusted by external feedback) V
OUT
V
IN
− 5.5 V
Reference Voltage (C
REF
= 150 nF, under no loading, T
A
= 25°C) V
REF_NL
1.183 1.190 1.197 V
Reference Voltage
(C
REF
= 150 nF, under no loading, −40°C ≤ T
A
≤ 85°C)
V
REF_NL_A
1.178 − 1.202 V
Reference Voltage Temperature Coefficient TC
VREF
− 0.03 − mV/°C
Reference Voltage Load Current
(V
OUT
= 3.3 V, V
REF
= V
REF_NL
±1.5%, C
REF
= 1.0 mF) (Note 5)
I
REF
2.5 − − mA
Reference Voltage Load Regulation
(V
OUT
= 3.3 V, I
LOAD
= 0 to 100 mA, C
REF
= 1.0 mF)
V
REF_LOAD
− 0.015 1.0 mV
Reference Voltage Line Regulation
(V
OUT
from 1.5 V to 5.5 V, C
REF
= 1.0 mF)
V
REF_LINE
− 0.03 1.0 mV/V
FB, LBI Input Threshold (I
LOAD
= 0 mA) V
FB,
V
LBI
1.174 1.190 1.200 V
N−FET ON Resistance R
DS(ON)−N
− 0.6 −
W
P−FET ON Resistance R
DS(ON)−P
− 0.9 −
W
LX Switch Current Limit (N−FET) I
LIM
− 1.0 − A
Operating Current into OUT
(V
FB
= 1.4 V, i.e. no switching, V
OUT
= 3.3 V)
I
Q
− 9.0 14
mA
Shutdown Current into OUT (LBI/EN = GND) I
SD
− 0.05 1.0
mA
LX Switch MAX. ON−Time (V
FB
= 1.0 V, V
OUT
= 3.3 V) t
ON
1.2 1.4 1.8
mS
LX Switch MIN. OFF−Time (V
FB
= 1.0 V, V
OUT
= 3.3 V) t
OFF
0.25 0.31 0.37
mS
FB Input Current I
FB
− 1.5 9.0 nA
Shutdown Current into BAT (LBI/EN = 0 V, V
OUT
= V
BAT
= 3.0 V) I
LBT
− 50 − nA
BAT to LX resistance (V
FB
= 1.4 V, V
OUT
= 3.3 V) R
LBT_LX
− 100 −
W
LBI/EN Input Current I
LBI/EN
− 1.5 8.0 nA
LBO Low Output Voltage (V
LBI
= 0 V, I
SINK
= 1.0 mA) V
LBO_L
− − 0.05 V
ENABLE (Pin 2) Input threshold, Low V
EN
− − 0.3 V
ENABLE (Pin 2) Input threshold, High V
EN
0.6 − − V
5. Loading capability increases with V
OUT
.
P1-P3P4-P6P7-P9P10-P12P13-P14

NCP1411DMR2G

Mfr. #:
Buy NCP1411DMR2G
Manufacturer:
ON Semiconductor
Description:
IC REG BOOST ADJ 1A MICRO8
Lifecycle:
New from this manufacturer.
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