2SB1412TLR Datasheet 2SB1412TLR, 2SB1412TLP, 2SB1386T100R | P1-P3

2SB1386 / 2SB1412 / 2SB1326

Transistors

Rev.A 1/4

Low frequency transistor (−20V, −5A)

2SB1386 / 2SB1412 / 2SB1326

zFeatures

1) Low V

CE(sat).

V

CE(sat) = −0.35V (Typ.)

(I

C/IB = −4A / −0.1A)

2) Excellent DC current gain characteristics.

3) Complements the 2SD2098 / 2SD2118 /

2SD2097.

zStructure

Epitaxial planar type

PNP silicon transistor

zExternal dimensions (Unit : mm)

(1) Base

(2) Collector

(3) Emitter

ROHM : CPT3

EIAJ : SC-63

2SB1386

2SB1326

2SB1412

(1) Base

(2) Collector

(3) Emitter

ROHM : MPT3

EIAJ : SC-62

(1) Emitter

(2) Collector

(3) Base

ROHM :

ATV

1.0

6.8±0.2

2.5±0.2

1.05

0.45±0.1

2.54

0.5±0.1

0.9

4.4±0.2

14.5±0.5

(1)

(2)

(3)

0.65Max.

±0.3

−

0.1

+

0.2

−

0.05

+

0.1

−

0.1

+

0.2

+

0.2

−

0.1

(3)(2)(1)

4.0

1.0±0.2

0.5±0.1

2.5

3.0±0.2

1.5±0.1

0.4±0.1

0.5±0.1

0.4±0.1

0.4

1.5

4.5

1.6±0.1

−0.1

+

0.2

−0.1

+

0.2

+

0.3

−0.1

2.3

±

0.22.3

±

0.2

0.65

±

0.1

0.9

0.75

1.0

±

0.2

0.55

±

0.1

9.5

±

0.5

5.5

1.5

±

0.3

2.5

1.5

2.3

0.5

±

0.1

6.5

±

0.2

5.1

C0.5

(3)

(2)

(1)

0.9

∗

Denotes h

FE

Abbreviated symbol: BH

∗

2SB1386 / 2SB1412 / 2SB1326

Transistors

Rev.A 2/4

zAbsolute maximum ratings (Ta=25°C)

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power

dissipation

Junction temperature

Storage temperature

∗

1 Single pulse, Pw=10ms

∗

2 When mounted on a 40

×

40

×

0.7 mm ceramic board.

∗

3 Printed circuit board glass epoxy board 1.6 mm thick with copper plating 100mm

2

or larger.

Parameter

V

CBO

V

CEO

V

EBO

P

C

Tj

Tstg

−30 V

V

A(DC)

°C

−20

−6

−5

I

C

A(Pulse)−10

∗

1

∗

3

∗

2

0.5

2W

W

1

10 W(Tc=25

°C

)

1W

2SB1386

2SB1412

2SB1326

150

−55 to 150

Symbol Limits Unit

zElectrical characteristics (Ta=25°C)

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current

transfer ratio

Collector-emitter saturation voltage

Output capacitance

∗

Measured using pulse current.

Parameter Symbol

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

h

FE

V

CE(sat)

f

T

Cob

Min.

−30

−20

−6

−

822SB1386,2SB1412

2SB1326

−

∗

−

120

0.35

60

−

−0.5

390

−1.0

−

VI

C

= −50

µ

A

I

C

= −1mA

I

E

= −50

µ

A

V

CB

= −20V

V

EB

= −5V

V

CE

= −2V, I

C

= −0.5A

I

C

/I

B

= −4A/ −0.1A

V

CE

= −6V, I

E

=50mA, f=100MHz

V

CB

= −20V, I

E

=0A, f=1MHz

V

µ

A

µ

A

−

120 − 390 −

V

MHz

pF

Typ. Max. Unit Conditions

Transition frequency

zPackaging specifications and h

FE

Package

Code

Taping

Basic ordering

unit (pieces)

T100 TL

1000 2500

−PQR

h

FE

2SB1386

−

TV2

2500

−

−PQR

2SB1412

−−QR

2SB1326

Type

h

FE values are classified as follows :

Item P Q R

h

FE

82 to 180 120 to 270 180 to 390

2SB1386 / 2SB1412 / 2SB1326

Transistors

Rev.A 3/4

zElectrical characteristic curves

Fig.1 Grounded emitter propagation

characteristics

COLLECTOR CURRENT : I

C

(A)

BASE TO EMITTER VOLTAGE : V

BE

(V)

0 −1.4−1.2−1.0−0.8−0.6−0.4

−0.2

−1m

−2m

−5m

−10m

−20m

−200m

−100m

−50m

−500m

−1

−2

−10

−5

V

CE

= −2V

25°C

−

25°C

Ta

=

100°C

Fig.2 Grounded emitter output

characteristics

COLLECTOR CURRENT : IC

(A)

COLLECTOR TO EMITTER VOLTAGE : V

CE

(V)

0 −0.4 −0.8 −1.2 −1.6 −2.0

−1

−2

−3

−5

−4

0

IB=0A

−

20mA

−

25mA

−

30mA

−

10mA

−

5mA

−

15mA

Ta=25°C

−

50mA

−

45mA

−

40mA

−

35mA

Fig.3 DC current gain vs.

collector current ( )

DC CURRENT GAIN : hFE

COLLECTOR CURRENT : IC

(A)

Ta

=

25

°C

−

2V

V

CE

=

−5V

−

1V

−

1m

−

5m

−

0.01

−

0.05

−

1

−

2

−

5

−

10

−

2m

100

200

500

1k

2k

5k

50

20

10

5

−

0.02

−

0.1

−

0.5

−

0.2

Fig.4 DC current gain vs.

collector current ( )

DC CURRENT GAIN : h

FE

COLLECTOR CURRENT : I

C

(A)

V

CE

= −1V

−1m −5m −0.01 −0.05 −1 −2 −5 −10−2m

100

200

500

1k

2k

5k

50

20

10

5

−0.02 −0.1 −0.5−0.2

25°C

−

25°C

Ta

=

100°C

Fig.5 DC current gain vs.

collector current ( )

DC CURRENT GAIN : h

FE

COLLECTOR CURRENT : I

C

(A)

−1m −5m −0.01 −0.05 −1 −2 −5 −10−2m

100

200

500

1k

2k

5k

50

20

10

5

−0.02 −0.1 −0.5−0.2

25°C

−

25°C

Ta

=

100°C

V

CE

= −2V

Fig.6 Collector-emitter saturation

voltage vs. collector current ( )

I

C

/I

B

=50/1

/1

Ta=25°C

40/1

30/1

10/1

COLLECTOR SATURATION VOLTAGE : V

CE(sat)

(V)

COLLECTOR CURRENT : I

C (A)

−1 −2 −5 −10

−0.0− -0.02 −0.1 −0.2 −0.5−0.05−2m −5m

−0.01

−2

−1

−0.5

−0.2

−0.1

−0.05

−0.02

−5

Fig.7 Collector-emitter saturation

voltage vs. collector current ( )

Ta=100°C

25°C

lC/lB=10

−25°C

COLLECTOR SATURATION VOLTAGE : V

CE(sat) (V)

COLLECTOR CURRENT : IC

(A)

−

1

−

2

−

5

−

10

−

0.01

−

0.02

−

0.1

−

0.2

−

0.5

−

0.05

−

2m

−

5m

−

0.01

−2

−1

−

0.5

−

0.2

−

0.1

−

0.05

−

0.02

−5

Fig.8

Collector-emitter saturation

voltage vs. collector current ( )

Ta=100°C

−25

°

C

25°C

l

C

/l

B

=30

COLLECTOR SATURATION VOLTAGE : V

CE(sat)

(V)

COLLECTOR CURRENT : I

C

(A)

−

1

−

2

−

5

−

10

−

0.01

−

0.02

−

0.1

−

0.2

−

0.5

−

0.05

−

2m

−

5m

−

0.01

−

2

−

1

−

0.5

−

0.2

−

0.1

−

0.05

−

0.02

−

5

Fig.9 Collector-emitter saturation

voltage vs. collector current ( )

Ta=100°C

−25

°C

25°C

l

C

/l

B

=40

COLLECTOR SATURATION VOLTAGE : V

CE(sat) (V)

COLLECTOR CURRENT : I

C

(A)

−

1

−

2

−

5

−

10

−

0.01

−

0.02

−

0.1

−

0.2

−

0.5

−

0.05

−

2m

−

5m

−

0.01

−

2

−

1

−

0.5

−

0.2

−

0.1

−

0.05

−

0.02

−

5

2SB1412TLR

2SB1412TLR

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