V30D45C
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Vishay General Semiconductor
Revision: 06-May-15
1
Document Number: 89994
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Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.30 V at I
F
= 5.0 A
FEATURES
• Trench MOS Schottky technology
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code; base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Case: TO-263AC (SMPD)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: as marked
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 15 A
V
RRM
45 V
I
FSM
200 A
V
F
at I
F
= 15 A 0.40 V
T
J
max. 150 °C
Package TO-263AC (SMPD)
Diode variations Dual common cathode
Top View Bottom View
TMBS
®
eSMP
®
Series
TO-263AC (SMPD)
K
1
2
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V30D45C UNIT
Maximum repetitive peak reverse voltage V
RRM
45 V
Maximum average forward rectified current
(fig. 1)
per device
I
F(AV)
30
A
per diode 15
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I
FSM
200 A
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C