SiHB28N60EF
www.vishay.com
Vishay Siliconix
S17-0294-Rev. C, 27-Feb-17
1
Document Number: 91601
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
EF Series Power MOSFET with Fast Body Diode
FEATURES
• Fast body diode MOSFET using E series
technology
• Reduced t
rr
, Q
rr
, and I
RRM
• Low figure-of-merit (FOM): R
on
x Q
g
• Low input capacitance (C
iss
)
• Low switching losses due to reduced Q
rr
• Ultra low gate charge (Q
g
)
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Telecommunications
- Server and telecom power supplies
• Lighting
- High intensity discharge (HID)
- Light emitting diodes (LEDs)
• Consumer and computing
- ATX power supplies
• Industrial
- Welding
- Battery chargers
• Renewable energy
- Solar (PV inverters)
• Switch mode power suppliers (SMPS)
• Applications using the following topologies
- LLC
- Phase shifted bridge (ZVS)
- 3-level inverter
- AC/DC bridge
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 28.2 mH, R
g
= 25 , I
AS
= 7 A
c. 1.6 mm from case
d. I
SD
I
D
, dI/dt = 900 A/μs, starting T
J
= 25 °C
PRODUCT SUMMARY
V
DS
(V) at T
J
max. 650
R
DS(on)
max. at 25 °C ()V
GS
= 10 V 0.123
Q
g
(Max.) (nC) 120
Q
gs
(nC) 17
Q
gd
(nC) 33
Configuration Single
D
2
PAK (TO-263)
G
D
S
ORDERING INFORMATION
Package D
2
PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHB28N60EF-GE3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
600
V
Gate-Source Voltage V
GS
± 30
Continuous Drain Current (T
J
= 150 °C) V
GS
at 10 V
T
C
= 25 °C
I
D
28
AT
C
= 100 °C 18
Pulsed Drain Current
a
I
DM
75
Linear Derating Factor 2W/°C
Single Pulse Avalanche Energy
b
E
AS
691 mJ
Maximum Power Dissipation P
D
250 W
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +150 °C
Drain-Source Voltage Slope T
J
= 125 °C
dV/dt
70
V/ns
Reverse Diode dV/dt
d
50
Soldering Recommendations (Peak Temperature)
c
for 10 s 300 °C